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Display material

A technology of phase change materials and display devices, applied in electrical components, nonlinear optics, instruments, etc., can solve problems that hinder the use of phase change materials

Pending Publication Date: 2021-08-27
E INK CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These technical issues have previously been thought to hinder the use of phase change materials in display devices

Method used

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Examples

Experimental program
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Embodiment 1 to Embodiment 29

[0180] Synthesis of Phase Change Materials

[0181] Various phase change materials according to the invention were prepared. Phase change materials are usually vacuum deposited as thin films. The most common techniques are sputtering or evaporation from prefabricated solid targets made of the desired composition. Exemplary phase change materials were prepared using these techniques as described in Table 1 below.

[0182] Multi-element phase change materials can be synthesized via co-sputtering and / or co-evaporation techniques. In these techniques, a specific composition is achieved by using multiple sources of pure elements deposited simultaneously. The resulting composition of the phase change material as deposited can be achieved by controlling the deposition rate of each source.

[0183] Co-sputtering and co-evaporation techniques are known and routine to those skilled in the art. By way of brief summary, the phase change material according to the present invention can...

Embodiment 30

[0190] Fabrication and testing of devices based on ultrathin films of solid phase change materials (PCMs). These devices exhibit beneficial properties resulting from the properties of the phase change materials used in their fabrication.

[0191] In the following examples, any phase change material (listed in Table 1) in Examples 1 to 29 can be successfully used to prepare a display device showing the following Figure 6 The favorable conversion appearance shown in . described below and Figure 6 The specific results shown are obtained from using TGS phase change material (Te 87 Ge 8 sn 5 ) and STS phase change material (Te 21 sn 28 Se 51 ) obtained from the device.

[0192] The fabricated device had an active area of ​​50x50 microns, and a crystallization time greater than 1 microsecond was found to enable bi-directional switching functionality in a device of this size.

[0193] Fabrication of solid-state reflective displays (SRDs) using ultrathin phase-change materi...

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Abstract

Provided herein is a phase change material for use in a display device. Also provided is a display device comprising a phase change material; the use of a phase change material as an optical absorber in a display device; a method of fabricating a pixel; and a method of fabricating a display device. The phase change material is as described in more detail herein.

Description

technical field [0001] The invention relates to a phase change material suitable for a display device. It also relates to a method of preparing a phase change material, to a display device comprising the phase change material, and to the use of the phase change material as an optical absorber in a display device. Background technique [0002] The use of phase change materials in various memory applications has been known for many years. For example, phase change random access memory (PCRAM) records data by switching a phase change material between an amorphous state and a crystalline state, where the two states have different optical and electronic properties. Likewise, phase-change materials have been used in rewritable optical storage devices since the 1990s, where data is written and rewritten again by switching between the amorphous and crystalline states of the phase-change material decided. [0003] In order for phase change materials to be suitable for use in memor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/00G02F1/01
CPCG02F1/0054G02F1/009G02F1/0147H10N70/8828H10N70/235
Inventor P·侯赛尼C·塔拉格兰德G·特里格斯C·赖特山田升
Owner E INK CORPORATION