A dual-target state elimination encoding and decoding method for 3d TLC-type NAND flash memory data storage
A data storage, dual-target technology, used in static memory, electrical digital data processing, response error generation and other directions, can solve problems such as storage data distortion and NAND flash reliability reduction, to eliminate state transition errors and achieve reliability. Effect
Active Publication Date: 2022-03-08
HARBIN INST OF TECH
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[0003] In recent years, 3D TLC-type NAND flash memory has been widely used as a solution for non-volatile storage media due to its advantages such as low access delay, low power consumption, and high shock resistance. In addition to the higher integration level, it also caused a significant reduction in the reliability of NAND flash memory. Take the wear resistance of write / erase cycles as an example. Traditional SLC (Single-Level Cell, each cell stores 1 bit information) type NAND flash memory can achieve more than 100,000 times of wear endurance, while 3D TLC type NAND flash memory will cause serious distortion of stored data after thousands of times of wear and tear. Therefore, how to introduce appropriate reliability management The method prolongs the service life of the device, which is an important research topic for the application of non-volatile storage systems based on 3D TLC-type NAND flash memory
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[0043] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them; based on this The embodiments in the invention, and all other embodiments obtained by persons of ordinary skill in the art without creative efforts, all belong to the scope of protection of the present invention.
[0044] A dual-target state elimination encoding and decoding method adapted to 3D TLC-type NAND flash memory data storage:
[0045] The method comprises the steps of:
[0046] Step 1: Preprocess the cell data through the encoder. Each cell can store 3 bits of information. The cell has 8 states N, which are ER, A, B, C, D, E, F , G;
[0047] Step 2: Divide the 8 states of the 3D TLC NAND flash memory into 4 groups in pairs, denoted as G i , whe...
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The present invention proposes a dual-object state elimination encoding and decoding method adapted to 3D TLC-type NAND flash memory data storage. The cell data is preprocessed by an encoder, and each cell can store 3 bits of information. The cell There are 8 states N in total, and the 8 states are divided into 4 groups in pairs, which are recorded as Gi; one group of GX is set as the double state of the target elimination, and after dividing the original data stream according to the length of the word line, take 4 cells are used as an encoded code segment, and the number num(N) of the 8 states in the 4-cell code segment is recorded, and the remapping encoding method is obtained according to the state combination in the code segment; after the remapping encoding The information is stored in different blocks of the flash memory; the decoder remaps the 4-cell code segment into the original data according to the flag bit; the method of the present invention can be used as a general method to improve the reliability of the 3D TLC type NAND flash memory.
Description
technical field [0001] The invention belongs to the field of non-volatile storage, and in particular relates to a dual-target state elimination encoding and decoding method adapted to 3D TLC type NAND flash memory data storage. Background technique [0002] At present, 3D TLC (Trinary-Level Cell, which stores 3 bits of information in each cell) NAND flash memory is widely used in non-volatile storage scenarios such as solid-state disks. A large number of studies have shown that the data storage reliability of 3D TLC NAND flash memory and The programmed threshold voltage distribution pattern is closely related. [0003] In recent years, 3D TLC-type NAND flash memory has been widely used as a solution for non-volatile storage media due to its advantages such as low access delay, low power consumption, and high shock resistance. In addition to the higher integration level, it also caused a significant reduction in the reliability of NAND flash memory. Take the wear resistance ...
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IPC IPC(8): G06F11/10G11C29/42
CPCG06F11/1068G11C29/42
Inventor 魏德宝张京超朴哲龙冯骅乔立岩彭喜元
Owner HARBIN INST OF TECH