Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and system for determining distribution of 2DEG concentration along gate width

A concentration and gate width technology, applied in the field of microelectronics, can solve the problems of undetectable 2DEG concentration distribution, difficult detection, and no relevant analysis of the specific distribution of 2DEG concentration

Active Publication Date: 2022-04-29
无锡芯鉴半导体技术有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Up to now, the detection of 2DEG in the existing technology is only to obtain the average concentration of 2DEG through the integration of the C-V curve, or to obtain the carrier concentration NCV with the material depth (distance from the surface) through the C-V curve. distribution, but there is no relevant analysis of the specific distribution of 2DEG concentration in the device, or the default is an ideal average distribution, but the actual situation cannot be an ideal average distribution, so the critical voltage and critical field strength of the device The calculation of parameters such as is also based on ideal conditions, which leads to the calculation accuracy of parameters such as device critical voltage and critical field strength is not very high
The main technical difficulty that cannot detect the 2DEG concentration distribution at present is that the electric field is one of the important parameters affecting the 2DEG concentration and distribution. In actual devices, the electric field distribution varies with the gate voltage, gate edge flatness, defect density and defect position. Among these factors, factors other than the gate voltage are uncontrollable factors in the actual epitaxial growth process
Therefore, the distribution of the electric field in the device is not ideally uniform, that is, the 2DEG concentration distribution is not uniform, which is difficult to detect

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and system for determining distribution of 2DEG concentration along gate width
  • Method and system for determining distribution of 2DEG concentration along gate width
  • Method and system for determining distribution of 2DEG concentration along gate width

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] see Figure 1 to Figure 4 As shown, Embodiment 1 of the present invention provides a method for determining the distribution of 2DEG concentration along the gate width, including the following steps:

[0040] S1: Calculate the average concentration of 2DEG by using the C-V curve of the device, and obtain the total concentration of 2DEG along the wide side of the gate based on the product of the average concentration of 2DEG and the wide side of the gate;

[0041] S2: applying unequal voltages to the gate of the device to adjust the electroluminescence intensity of the device, and obtaining a luminescence diagram of the device under unequal gate voltage;

[0042] S3: According to the device luminescence diagram, the distribution state of the electroluminescence intensity along the wide side of the gate under different gate voltages is obtained, and the relationship between the total light intensity and the gate voltage is calculated based on the distribution state of the...

Embodiment 2

[0059] A system for determining the distribution of 2DEG concentration along the grid width disclosed in Embodiment 2 of the present invention is introduced below. The system for determining the distribution of 2DEG concentration along the grid width described below is the same as the system for determining the distribution of 2DEG concentration along the grid width described above. The methods can be referred to each other.

[0060] see Figure 5 As shown, Embodiment 2 of the present invention discloses a system for determining the distribution of 2DEG concentration along the gate width, and its specific structure includes the following content:

[0061] The 2DEG total concentration calculation module 10, the 2DEG total concentration calculation module 10 is used to calculate the 2DEG average concentration by using the C-V curve of the device, and based on the product of the 2DEG average concentration and the gate wideside, the 2DEG along the gate wideside is obtained. total...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for determining distribution of 2DEG concentration along gate width, which comprises the following steps of: calculating by using a C-V curve of a device to obtain the average concentration of 2DEG, and obtaining the total concentration of 2DEG along the wide edge of a gate based on the product of the average concentration of 2DEG and the wide edge of the gate; unequal voltages are applied to the grid electrode of the device to adjust the electroluminescence intensity of the device, and a device luminescence graph under the unequal grid voltages is obtained; the distribution state of the electroluminescence intensity along the wide edge of the grid electrode under the unequal grid voltage is obtained according to a device luminescence graph, the change relation of the total light intensity along with the grid voltage is calculated based on the distribution state of the electroluminescence intensity along the wide edge of the grid electrode, the total light intensity along the wide edge of the grid electrode under a certain grid voltage and the total 2DEG concentration are determined, and the 2DEG concentration under the unit light intensity is obtained; and calculating the concentration of the 2DEG distributed along the wide side of the grid based on the concentration of the 2DEG under the unit light intensity and the electroluminescence intensity. According to the invention, the actual distribution of the 2DEG concentration in the device can be tested, and the method is of great significance in improving the accuracy of device parameters such as critical voltage and critical field intensity.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a method and system for determining the distribution of 2DEG concentration along the gate width. Background technique [0002] The 2DEG concentration and its concentration distribution are of great significance to improve the accuracy of device parameters such as critical voltage and critical field strength. Up to now, the detection of 2DEG in the existing technology is only to obtain the average concentration of 2DEG through the integration of the C-V curve, or to obtain the carrier concentration N through the C-V curve. CV The distribution with the material depth (distance from the surface), but there is no relevant analysis of the specific distribution of the 2DEG concentration in the device, or the default is an ideal average distribution, but the actual situation cannot be an ideal average distribution. Therefore, the calculation of parameters such as the critical ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N21/66
CPCG01N21/66
Inventor 陈雷雷闫大为顾晓峰
Owner 无锡芯鉴半导体技术有限公司