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Electrooptic device, projection type display and method for manufacturing electrooptic device

An electro-optical device and light valve technology, applied in optics, nonlinear optics, circuits, etc., can solve problems such as difficulty in improving display images, difficulty in shading, increase in internal surface reflection or multiple reflections, etc.

Inactive Publication Date: 2005-05-25
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Especially in recent years, in order to achieve the general requirement of high-quality display images, it is necessary to seek high-definition electro-optical devices or miniaturization of pixel pitch, and further, to increase the intensity of incident light in order to obtain bright displays. Therefore, if Using various light-shielding technologies in the past, it is quite difficult to perform sufficient light-shielding, and there is a problem that the quality of the displayed image deteriorates due to flickering due to changes in the characteristics of the TFT transistor.
[0008] In addition, in order to improve such light resistance, it is conceivable to widen the light-shielding film forming region, but there is a problem that it is difficult to increase the aperture ratio of each pixel to increase the brightness of the displayed image by widening the light-shielding film forming region.
Furthermore, there is a problem that is difficult to solve, that is, in view of the existence of the light shielding film on the lower side of the TFT or the light shielding film on the upper side of the TFT formed by the data line, etc. Due to the fact of sub-reflected light, if the area where the light-shielding film is formed is widened casually, such internal reflection or multi-reflection light will increase.

Method used

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  • Electrooptic device, projection type display and method for manufacturing electrooptic device
  • Electrooptic device, projection type display and method for manufacturing electrooptic device
  • Electrooptic device, projection type display and method for manufacturing electrooptic device

Examples

Experimental program
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Effect test

no. 1 Embodiment

[0102] First, refer to Figure 1 to Figure 16 The electro-optical device of the first embodiment will be described.

[0103] refer to Figure 1 to Figure 9 The configuration and operation of the electro-optical device using the present invention will be described. figure 1 It is an equivalent circuit diagram of various elements, wiring, etc. formed on a plurality of pixels arranged in a matrix in the electro-optical device according to the first embodiment of the present invention. figure 2 yes figure 1 It is a plan view of multiple adjacent pixel groups of the TFT array substrate on which data lines, scanning lines, pixel electrodes and light-shielding films have been formed in the electro-optic device shown. image 3 is an enlarged view showing a pixel electrode formation region of the TFT array substrate. Figure 4 is an enlarged view showing the scan line and data line forming regions of the TFT array substrate. Figure 5 It is an enlarged view showing the formation ...

no. 2 Embodiment

[0173] Second, refer to Figure 17 An electro-optical device according to a second embodiment of the present invention will be described. Figure 17 It is a cross-sectional view of the electro-optical device 100' of the second embodiment.

[0174] In the manufacturing method of the electro-optical device 100 of the above-mentioned first embodiment, reference to Figure 11 (B) illustrates the formation process of the connection groove 161, while referring to Figure 13 (D) In ​​the step of forming the side wall forming groove 16 described, as Figure 17 As shown, the side wall forming groove 16 is formed so as to reach the second light-shielding film 14, whereby the electro-optical device 100' of the second embodiment is manufactured. The other manufacturing steps are the same as those of the first embodiment.

[0175] Such as Figure 17 As shown, if it is manufactured in this way, when forming the first light-shielding film 13, use the light-shielding sidewall 131 formed ...

no. 3 Embodiment

[0177] Second, refer to figure 1 and Figure 18 to Figure 20 The pixel portion of the electro-optical device according to the third embodiment of the present invention will be described. Figure 18 It is a plan view of a plurality of adjacent pixel groups of the TFT array substrate on which data lines, scanning lines, pixel electrodes, etc. have been formed in the third embodiment. Figure 19 yes Figure 18 The D-D' section diagram, Figure 20 It is related to the part of the laminate formed on the TFT array substrate 10 Figure 18 The E-E' cross-section diagram. again, in Figure 19 and Figure 20 In , the size of each layer and each component is drawn in a recognizable size on the figure, so the scale of each layer and each component is different. Furthermore, in the third embodiment from Figure 18 to Figure 20 in, right and from Figure 1 to Figure 9 Components that are the same as those in the first embodiment shown are given the same reference numerals, and desc...

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Abstract

The present invention relates to an electro-optical device characterized by: a first substrate, a pixel electrode arranged on the first substrate; a thin film transistor arranged on the first substrate and connected to the pixel electrode ; an insulating film formed on the upper layer of the thin film transistor and around the thin film transistor; a trench for sidewall formation formed on the insulating film outside the thin film transistor; and the insulating film in a region where the thin film transistor is formed A first light-shielding film arranged with grooves is formed on the upper side and the side wall. In this way, by three-dimensionally shielding the channel region, it is possible to prevent light from entering the channel region of the TFT for pixel switching from the side or obliquely, thereby preventing TFT malfunction or lowering of reliability.

Description

technical field [0001] The present invention relates to an electro-optical device of an active matrix driving method, a projection display device including the device, and a method of manufacturing the device. More specifically, it relates to an electro-optical device in which thin-film transistors (hereinafter referred to as TFTs as appropriate) for switching pixels are laminated on a substrate, a projection-type display device using it as a light valve, and the manufacture of such an electro-optical device. Method of manufacturing the device. Background technique [0002] In the electro-optic device of the TFT active matrix driving type, when incident light is irradiated to the channel region of the pixel switch TFT provided in each pixel, a light leakage current is generated due to the excitation of light, so that the TFT The properties change. Especially in the case of an electro-optical device for a light valve of a projector, since the intensity of incident light is ...

Claims

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Application Information

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IPC IPC(8): G02F1/1335G02F1/1362G02F1/1368
CPCG02F1/133553G02F1/136209G02F1/136227G02F1/1368H01L29/78633G02F1/1362G02F1/133345G02F1/1343H01L29/786G02F2201/123
Inventor 安川昌宏山崎泰志
Owner SEIKO EPSON CORP