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Method and device for plasma doping

A plasma and cavity technology, which is used in the field of plasma doping and devices, and can solve the problems of high frequency power change and uncontrollable concentration.

Inactive Publication Date: 2005-02-09
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, this control method has a disadvantage, that is, the change of high-frequency power, so that the control of high-frequency current causes undesired electron density, impurity ion density in the plasma, and ion energy acting on the substrate. uncontrollable

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  • Method and device for plasma doping
  • Method and device for plasma doping
  • Method and device for plasma doping

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Embodiment Construction

[0014] The various plasma doping methods and devices used in the present invention will be described below with reference to the accompanying drawings.

[0015] Examples will be described.

[0016] refer to figure 1 , which shows a plasma doping device according to the present invention, generally indicated by reference numeral 10 . The doping device 10 has a cylindrical container 12 defining a cavity 14 . The container 12 has a first portion 16 defining a side wall 18 and a bottom wall 20 of the container 12 , and a second portion 22 defining a top wall 24 of the container 12 . The first portion 16 of the container 12 is made of an electrically conductive material, such as aluminum and stainless steel, and is electrically grounded to earth. The second part 22 of the container 12 , namely the top wall 24 is made of a dielectric material, such as silicon glass, through which a high-frequency electric field is induced into the cavity 14 . An opening 26 is defined in the bott...

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Abstract

A method for impurity implantation, in which a substrate is positioned on a table provided within a chamber in which a vacuum will be introduced and also an implantation impurity is supplied. A first high frequency electric power is applied to a plasma generating element to thereby generate a plasma so that the impurity in the chamber is implanted in the substrate. Also, a second high frequency electric power is applied to the table. Detected are a condition of the plasma in the chamber and a voltage or current in the table. A controller controls at least one of the first and second high frequency electric power sources according to the detected condition of the plasma and / or the detected voltage or current, thereby controlling an implantation concentration of the impurity to be implanted.

Description

technical field [0001] The present invention relates to a method and apparatus for doping an impurity ion into a substrate such as a semiconductor substrate by using plasma doping or plasma implantation techniques. Background technique [0002] US Patent No. 4912065 discloses a plasma doping method by which ionized impurities are implanted into a substrate with reduced energy. Japanese Patent No. 2718926 also discloses a method for controlling the concentration of implanted impurities in which high-frequency current is detected for control while discharging. [0003] However, this control method has a disadvantage, that is, the change of high-frequency power, thereby controlling the high-frequency current causes undesired electron density, impurity ion density in the plasma, and ion energy acting on the substrate. uncontrollable. Contents of the invention [0004] It is therefore an object of the present invention to propose a method and an apparatus in which the doping ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/223
Inventor 奥村智洋中山一郎水野文二
Owner PANASONIC CORP