Semiconductor laser apparatus
A laser device and semiconductor technology, applied in the direction of semiconductor laser devices, semiconductor lasers, laser devices, etc., can solve the problems of deterioration of high-frequency characteristics of the infrared semiconductor laser element 902a
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
no. 1 approach
[0144] (1) Composition and connection of semiconductor laser device
[0145] The semiconductor laser device of the first embodiment includes a first semiconductor laser element and a second semiconductor laser element. The wavelength of laser light emitted from the first semiconductor laser element is different from the wavelength of laser light emitted from the second semiconductor laser element.
[0146] In the following description, a semiconductor laser element emitting blue-violet laser light (wavelength of about 400 nm) (hereinafter referred to as a blue-violet semiconductor laser element) is used as the first semiconductor laser element.
[0147] In addition, a semiconductor laser element (hereinafter referred to as a red semiconductor laser element) emitting red laser light (wavelength of about 658 nm) is used as the second semiconductor laser element.
[0148] figure 1 It is a perspective view showing the appearance of the semiconductor laser device of the first em...
no. 2 approach
[0280] (1) Composition and connection of semiconductor laser device
[0281] The semiconductor laser device according to the second embodiment differs from the semiconductor laser device 500 according to the first embodiment in the configuration and operation in the following points.
[0282] Figure 10 It is a schematic front view showing a state in which the cover 4 of the semiconductor laser device according to the second embodiment is removed, Figure 11 It is a schematic top view showing a state in which the cover 4 of the semiconductor laser device according to the second embodiment is removed.
[0283] Such as Figure 10 As shown, a conductive fusion layer H is formed on the conductive supporting member 5 integrated with the package main body 3 .
[0284] On the fused layer H, the blue-violet semiconductor laser element 10 is bonded so that the n-side pad electrode 10b constitutes the supporting member 5 side.
[0285] On the p-side pad electrode 10a of the blue-vio...
no. 3 approach
[0330] (1) Composition and connection of semiconductor laser device
[0331] The semiconductor laser device of the third embodiment differs from the configuration and operation of the semiconductor laser device 500 of the second embodiment in the following points.
[0332] Figure 13 It is a schematic front view showing a state in which the cover 4 of the semiconductor laser device according to the third embodiment is removed, Figure 14 It is a schematic top view showing a state in which the cover 4 of the semiconductor laser device according to the third embodiment is removed.
[0333] Such as Figure 13 As shown, a conductive fusion layer H is formed on the conductive supporting member 5 integrated with the package main body 3 . On the fused layer H, the blue-violet semiconductor laser element 10 is bonded so that the n-side pad electrode 10b constitutes the supporting member 5 side.
[0334] In the third embodiment, the width (Y direction) and length (X direction) of t...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More