Semiconductor laser apparatus
A laser device and semiconductor technology, applied in the direction of semiconductor laser device, semiconductor laser, laser device, etc., can solve the problem of high frequency characteristic deterioration of infrared semiconductor laser element 902a, etc.
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no. 1 approach
[0144] (1) Composition and connection of semiconductor laser device
[0145] The semiconductor laser device of the first embodiment includes a first semiconductor laser element and a second semiconductor laser element. The wavelength of the laser light emitted by the first semiconductor laser element is different from the wavelength of the laser light emitted by the second semiconductor laser element.
[0146] In the following description, a semiconductor laser element (hereinafter referred to as a blue-violet semiconductor laser element) that emits a blue-violet laser light (wavelength of about 400 nm) is used as the first semiconductor laser element.
[0147] In addition, a semiconductor laser element (hereinafter referred to as a red semiconductor laser element) that emits a red laser light (wavelength of about 658 nm) is used as the second semiconductor laser element.
[0148] figure 1 It is a perspective view showing the appearance of the semiconductor laser device of the f...
no. 2 approach
[0280] (1) Composition and connection of semiconductor laser device
[0281] The semiconductor laser device of the second embodiment differs from the semiconductor laser device 500 of the first embodiment in the following points in the configuration and operation.
[0282] 10 is a schematic front view showing the state after the cover 4 of the semiconductor laser device of the second embodiment is removed, and FIG. 11 is a schematic top view showing the state after the cover 4 of the semiconductor laser device of the second embodiment is removed Figure.
[0283] As shown in FIG. 10, on the conductive support member 5 integrated with the package body 3, a conductive fusion layer H is formed.
[0284] On the fusion layer H, the blue-violet semiconductor laser element 10 is bonded so that the n-side pad electrode 10b constitutes the support member 5 side.
[0285] On the p-side pad electrode 10a of the blue-violet semiconductor laser element 10, a SiO 2 (Silicon oxide) insulating lay...
no. 3 approach
[0330] (1) Composition and connection of semiconductor laser device
[0331] The semiconductor laser device of the third embodiment is different from the semiconductor laser device 500 of the second embodiment in the following points in the configuration and operation.
[0332] Figure 13 It is a schematic front view showing the state after the cover 4 of the semiconductor laser device of the third embodiment is removed, and FIG. 14 is a schematic top view showing the state after the cover 4 of the semiconductor laser device of the third embodiment is removed.
[0333] Such as Figure 13 As shown, on the conductive support member 5 integrated with the package body 3, a conductive fusion layer H is formed. On the fusion layer H, the blue-violet semiconductor laser element 10 is bonded so that the n-side pad electrode 10b constitutes the support member 5 side.
[0334] In the third embodiment, the width (Y direction) and length (X direction) of the blue-violet semiconductor laser e...
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