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Self-emission device

A self-illuminating device and self-illuminating technology, applied in lighting devices, electroluminescent light sources, light sources, etc., can solve problems such as damage, leakage layer structure, and degradation of luminous performance of self-luminous devices

Inactive Publication Date: 2006-04-12
TOHOKU PIONEER CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, in the case where internal charges are generated in the self-luminous element during non-driving of the self-luminous device, it is considered that when the internal charges are concentrated due to unevenness of the layer structure, etc., the formation of leakage paths may occur or the The damage of the layer structure caused by the discharge causes the problem of deteriorating the luminous performance of the self-luminous device during driving.
In addition, the internal electric field generated by the internal charge movement or accumulated charge may cause the brightness of the device to deteriorate, etc.

Method used

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Examples

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Embodiment Construction

[0015] Hereinafter, embodiments of the present invention will be described with reference to the drawings. figure 1 It is an explanatory diagram showing a self-luminous device according to an embodiment of the present invention. This self-luminous device includes: a self-luminous element 1 in which a layered structure 13 including a light-emitting layer is formed between a pair of electrodes 11 and 12; The self-luminous element 1 has, for example, a structure in which a first electrode (lower electrode) 11, a layered structure 13, and a second electrode (upper electrode) 12 are stacked on a substrate 10, and the electrodes 11, 12 are connected to the control unit 2 through lead wires 4A, 4B. . Furthermore, an internal charge discharge unit 3 is provided, which forms a discharge self-luminescence for at least one electrode (both electrodes 11 and 12 in the illustrated example) of the self-luminescence element 1 when the driving of the control unit 2 ends. The charge flow path...

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Abstract

To maintain the improved emission performance of a self-light-emitting device by removing internal charge in a self-light-emitting element when the self-light-emitting device is not driven. The self-light-emitting device has the self-light-emitting element 1 in which a laminated structure 13 containing an emission layer is formed between a pair of electrodes 11, 12, and a control means 12 for controlling the emission / non-emission of the self-light-emitting element 1. The self-light-emitting element 1 has a structure where a first electrode (lower electrode) 11, a layered structure 13, and a second electrode (upper electrode) 12 are laminated on a substrate 10. The electrodes 11, 12 are connected to a control means 2 via pull-out wires 4A, 4B. When the drive of the control means 2 is completed, at least one electrode (both of the electrodes 11, 12 in the illustrated example) in the self-light-emitting element 1 is provided with an internal charge discharging means 3 for forming a charge channel for discharging internal charge in the self-light-emitting element 1.

Description

technical field [0001] The present invention relates to self-luminous devices. Background technique [0002] Organic EL (OEL: Organic Electroluminescence: Organic Electroluminescence) devices, Organic Light Emitting Diodes (OLED: Organic Light Emitting Diode) and other self-luminous devices can be used as light sources for flat panel displays, lighting, scanners, etc. The performance of the device has attracted attention. In particular, as a display device, it is characterized in that desired luminance efficiency is obtained by using each color of RGB, the driving voltage is as low as about several volts to more than ten volts, and high visibility can be obtained even when viewed from an oblique angle. [0003] This self-luminous device has as a light-emitting element a self-luminous element having a basic structure in which a semiconductor layer having a pn junction is sandwiched between an anode (or hole injection electrode) and a cathode (electron injection electrode). ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05B33/08H05B33/02H05F3/02H05B44/00
CPCG09G2300/0452G09G2300/023G09G2320/0233G09G3/3225G09G3/3216
Inventor 福田善教
Owner TOHOKU PIONEER CORP