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Film-forming apparatus and film-forming method

A film-forming device and film-forming method are applied in gaseous chemical plating, coatings, electrical components, etc., and can solve problems such as increased film-forming time

Inactive Publication Date: 2006-05-24
TOKYO ELECTRON LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since it is necessary to have cleaning treatment in the film formation, there is a problem that the film formation time increases

Method used

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  • Film-forming apparatus and film-forming method
  • Film-forming apparatus and film-forming method
  • Film-forming apparatus and film-forming method

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Experimental program
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Embodiment Construction

[0038] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. figure 1 It is a schematic sectional view of the structure of the film formation apparatus 10 which concerns on one Embodiment of this invention. refer to figure 1 , the film forming apparatus 10 is constituted by a plasma processing apparatus. The film forming apparatus 10 is made of, for example, a conductor such as aluminum for its side walls and bottom, and has a processing container 15 formed entirely in a cylindrical shape.

[0039] The processing container 15 is provided with a plasma generation chamber 14 and a film formation chamber 20 for forming a film on a substrate with a film formation gas, and is separated by a separation plate 16 therebetween. The separation plate 16 is provided with a plurality of holes of fine diameter. Details will be given later.

[0040] The top of the processing container 15 is opened, and a sealing member made of AlN, Al, etc....

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PUM

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Abstract

The film forming device (10) of the present invention includes a plasma generating chamber (14) that is pressurized by a process gas to generate plasma; a film forming chamber (20) that accommodates a substrate and forms a film on the substrate; and has a plurality of holes and A separation plate (17) for separating the plasma generation chamber (14) and the film formation chamber (20). The diameter of the hole of the separation plate (17) is such that the pressure of the plasma generation chamber (14) is 2.0 times or more higher than the pressure of the film formation chamber (20). The film forming apparatus (10) further includes means for applying a predetermined bias voltage between the plasma generating chamber (14) and the film forming chamber (20).

Description

technical field [0001] The present invention relates to a film forming device and a film forming method, and particularly to a film forming device and a film forming method capable of forming a film in a short time. Background technique [0002] A conventional CVD film forming apparatus and method are disclosed in, for example, Japanese Unexamined Patent Application Publication No. 2001-185546 (Patent Document 1) and Japanese Patent Application Publication No. 2002-539326 (Patent Document 2). Patent Document 1 discloses a film forming apparatus in which a reaction chamber in which a substrate is placed is separated from a plasma formation chamber through an electrode portion in a vacuum chamber capable of evacuation, and a film is formed in the reaction chamber. The structure of the electrode portion is a mesh or comb shape, thereby enclosing the plasma formed in the plasma forming chamber and adopting a structure through which radicals can pass. The radicals formed in the ...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/452C23C16/509C23C16/511H01J37/32H01L21/31H01L21/314
CPCC23C16/452C23C16/5096C23C16/511H01J37/32192H01J37/32357H01L21/02274C23C16/455H01L21/31H01L21/02H01L21/3145
Inventor 寒川诚二野泽俊久
Owner TOKYO ELECTRON LTD