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Recess gate and method for fabricating semiconductor device with the same

A semiconductor and device technology, which is applied in the manufacture of semiconductor devices with recessed gates, and in the field of recessed gates, which can solve the problems of incomplete opening of contact holes and increased thickness

Inactive Publication Date: 2006-07-05
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as shown in FIG. 1D, since the recess gate 100 is too high, the thickness of the interlayer insulating layer 18 to be etched to form the contact hole 19 increases.
As a result, there is a problem that the contact hole 19 is not fully opened

Method used

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  • Recess gate and method for fabricating semiconductor device with the same
  • Recess gate and method for fabricating semiconductor device with the same
  • Recess gate and method for fabricating semiconductor device with the same

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Embodiment Construction

[0021] Referring to the accompanying drawings, a recessed gate and a method for manufacturing a semiconductor device having a recessed gate according to preferred embodiments of the present invention will be described in detail.

[0022] figure 2 is a cross-sectional view showing a semiconductor device having a recessed gate according to a preferred embodiment of the present invention.

[0023] As shown, each recess gate 200 includes: a substrate 21 based on a material such as silicon; a recess 25 formed at a portion of the substrate 21 with a predetermined depth; a gate insulating layer 26 formed on the recess 25 and the substrate 21 a patterned gate polysilicon layer 27A, which is formed on the gate insulating layer 26; a patterned gate metal layer 28A, which is formed on the patterned gate polysilicon layer 27A, and fills the recess 25; and a gate hard mask 29A , which is formed on the patterned gate metal layer 28A.

[0024] exist figure 2 Among them, the patterned gate...

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Abstract

A recess gate and a method for fabricating a semiconductor device with the same are provided. The recess gate includes: a substrate; a recess formed with a predetermined depth in a predetermined portion of the substrate; a gate insulation layer formed over the substrate with the recess; a gate polysilicon layer formed on the gate insulation layer; a gate metal layer being formed on the gate polysilicon layer and filling the recess; and a gate hard mask formed on the gate metal layer.

Description

technical field [0001] The present invention relates to a semiconductor technology; and, more particularly, to a recess gate and a method for manufacturing a semiconductor device having a recess gate. Background technique [0002] Gatelines are usually formed on planarized active areas. However, as the size of the pattern has been reduced, the channel length of the gate has been reduced, and the doping concentration of ion implantation has been increased, resulting in an increase in the electric field, which leads to junction leakage. Therefore, the formation of the above-mentioned gate lines has difficulties in ensuring refresh characteristics. [0003] As an improved gate line forming method, a recessed gate forming process for forming a gate after recessing a portion of an active region has been proposed. The recessed gate formation process makes it possible to increase the channel length and reduce the doping concentration of ion implantation. Therefore, by such a rec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L21/336H01L29/78
CPCH01L21/28061H01L29/66621H01L21/18
Inventor 刘载善孔弼九
Owner SK HYNIX INC