Thin film transistor substrate, display device, and method of fabricating the same
A technology for thin film transistors and display devices, which can be used in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., and can solve problems such as inability to correctly manufacture
Inactive Publication Date: 2007-01-24
SAMSUNG ELECTRONICS CO LTD
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[0011] As described above, since flexible substrates such as plastic substrates expand or contract depending on manufacturing conditions unlike conventional glass substrates, it cannot be correct if the design does not take into account the margin to overcome substrate deviation caused by substrate size changes TFT
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[0058] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the thickness of layers, films and regions are exaggerated for clarity. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. Unless otherwise indicated, like reference numerals refer to like elements throughout.
[0059] Generally, when determining the size and resolution of a liquid crystal display ("LCD") product, the size of a unit pixel on a thin film transistor ("TFT") substrate is automatically determined. Therefore, the steps involved in designing a TFT array are: designing the elements of the unit pixel according to the physical properties of the liquid crystal used and the margin of the manufacturing process, that is, the TFT, the pixel electrode and ...
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A thin film transistor (''TFT'') substrate includes a gate line formed on a base substrate, a data line insulated from the gate line, and a TFT formed at the intersection between the gate line and the data line. A line width of the gate line is greater than a line width of the data line. The data line includes a first data line insulated from and intersected with the gate line and a second data line intersecting the first data line and having an end electrically connected to the data line. Further, a drain electrode of the TFT is spaced apart from the data line by a predetermined interval. A display device comprising the TFT substrate and a method of fabricating the TFT substrate are also disclosed. Thus, the present invention can be prepared against the misalignment due to the expansion or shrinkage of the substrate during the process of fabricating the LCD device using a flexible substrate.
Description
[0001] This application claims priority from Korean Patent Application No. 10-2005-0066864 filed on Jul. 22, 2005, the contents of which are hereby incorporated by reference in their entirety. technical field [0002] The invention relates to a spacer structure, a thin film transistor, a display device including the spacer structure and the thin film transistor substrate and a manufacturing method thereof. More specifically, the present invention relates to a spacer structure, a thin film transistor, a display device including the spacer structure and the thin film transistor, and a manufacturing method thereof, wherein the spacer structure and the thin film transistor are used for Misalignment due to expansion or contraction of the flexible substrate during a process of manufacturing a display device using the flexible substrate is prevented. Background technique [0003] Generally, a liquid crystal display ("LCD") dev...
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IPC IPC(8): H01L27/12H01L23/522H01L21/84H01L21/768G02F1/136
CPCH01L27/1214H01L29/78603G02F1/136227G02F1/136213H01L27/12G02F1/136286H01L27/124G02F1/136
Inventor 吴浚鹤徐宗铉
Owner SAMSUNG ELECTRONICS CO LTD