Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Systems and methods for forming integrated circuit components having precise characteristics

A technology of integrated circuits and components, which is applied in the system field of integrated circuit components, can solve the problems of increasing the cost of integrated circuit devices, increasing cycle time and manpower, and reducing efficiency, so as to achieve the effects of reducing cycle time, increasing production, and reducing costs

Inactive Publication Date: 2007-07-04
TOPPAN PHOTOMASKS INC
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such handling of components on semiconductor wafers can increase cycle time and labor, which can reduce efficiency and can thus increase the cost of manufacturing integrated circuit devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Systems and methods for forming integrated circuit components having precise characteristics
  • Systems and methods for forming integrated circuit components having precise characteristics
  • Systems and methods for forming integrated circuit components having precise characteristics

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Preferred embodiments of the present invention and their advantages are best understood by referring to FIGS. 1 through 6, wherein like numerals are used to indicate like and corresponding parts.

[0019] Figure 1 illustrates a cross-sectional view of an example photomask assembly 10 in accordance with certain embodiments of the invention. Photomask assembly 10 may include a pellicle assembly 14 mounted on photomask 12 . Substrate 16 and patterned layer 18 may form photomask 12, otherwise referred to as a mask or reticle, which may have a variety of sizes and shapes including, but not limited to, circular, rectangular, or square, for example. The photomask 12 can also be any of a variety of photomask types including, but not limited to, a primary master, a five-inch reticle, a six-inch reticle, a nine-inch reticle, or a projected image of a circuit pattern to any other appropriately sized reticle on a semiconductor wafer. The photomask 12 can also be a binary mask, a ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
transmittivityaaaaaaaaaa
Login to View More

Abstract

A method of forming integrated circuit components is provided. A photomask is provided that includes a first mask feature having a mask feature geometry corresponding to a first type of integrated circuit (IC) component. A first lithography process is performed to transfer the first mask feature geometry to a semiconductor wafer to form a first IC component on the semiconductor wafer. At least one electrical characteristic of the first IC component on the semiconductor wafer is measured. The first mask feature geometry is physically modified based at least on the results of measuring the at least one electrical characteristic of the first IC component.

Description

technical field [0001] The present invention relates generally to integrated circuit fabrication, and more particularly to a system and method for forming integrated circuit components with precise characteristics. Background technique [0002] An integrated circuit device typically includes a plurality of circuit components, such as a plurality of transistors, resistors, and capacitors. Such integrated circuit components may be fabricated by forming specific geometries in semiconductor wafers, such as silicon wafers, using various integrated circuit fabrication techniques, such as various deposition and photolithographic techniques. In some instances, two or more electronic components of an integrated circuit device are related to each other such that one or more characteristics of the electrical components must "match" in order for the integrated circuit device to function properly. For example, it may be necessary that a particular pair of resistors in an integrated circ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66H01L21/82H01L21/306H01L21/3205H01L23/58G03F9/00G06F17/50
CPCG03F1/144H01L22/20G03F7/70433G03F7/70658G03F1/84H01L22/14G03F7/70466H01L2924/0002H01L2924/00
Inventor C·A·韦斯特
Owner TOPPAN PHOTOMASKS INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com