Manufacturing method of Fin field-effect transistor

Abstract

The disclosure provides a manufacturing method for a fin field-effect transistor. The method to make the fin field-effect transistor comprises: forming a fin structure and a gate structure spanning on the fin structure on a substrate; and forming a source-drain region on the fin structure, which comprises: forming an epitaxial layer; and forming a sacrificial layer on the surface of the epitaxial layer to prevent the epitaxial layer from being lost in the subsequent removal steps.

Description

CROSS-REFERENCES TO RELATED APPLICATIONS[0001]This application claims priority to Chinese patent application No. CN 202010478559.0, filed on May 29, 2020 at CNIPA, and entitled “A MANUFACTURING METHOD OF FIN FIELD-EFFECT TRANSISTOR”, the disclosure of which is incorporated herein by reference in entirety.TECHNICAL FIELD[0002]This invention relates to the field of semiconductor chip manufacturing, in particular, it relates to a manufacturing method of fin field-effect transistor.BACKGROUND[0003]A Fin field-effect transistor is a kind of new complementary metal oxide semiconductor (CMOS) transistor. The main character of a Fin field-effect transistor is the fin semiconductor wrapped by a gate electrode in the channel region. The length of the fin along the source-drain direction is the length of channel. The structure wrapped by the gate electrode enhances the control ability of the gate and provides a better electrical control for the channel. Compared with a conventional planar tran...

AI Technical Summary

Benefits of technology

The present invention describes a method of manufacturing a fin field-effect transistor. This involves forming a fin structure on a substrate and a gate structure spanning on the fin structure. Thereafter, a source-drain region is formed on the fin structure by depositing an epitaxial layer and creating a sacrificial layer on the surface of the epitaxial layer to protect it from loss in subsequent steps. This method helps to avoid the loss of epitaxial layer during the manufacturing process, leading to improved performance of the fin field-effect transistor.

Problems solved by technology

However, during the removing step and other subsequent steps, the epitaxial layer tends to wear out, which seriously affects the quality of the fin structures.

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