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Copper deposition chamber having integrated bevel clean with edge bevel removal detection

Inactive Publication Date: 2007-09-13
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For a metal layer deposited by a PVD process, the bevel and edge region is usually thin and unevenly deposited; therefore, the metal has poor adhesion and becomes a source of particle contamination.
The edge bead is particularly undesirable.
The edge bead is easily torn off from the substrate, damaging the adjacent portion of the substrate.
The broken bead may cause further damage to the devices when it becomes loose.
Although both types of EBR systems are generally effective in removing the edge bead and over deposited metal layer from the substrate, both systems suffer from inherent disadvantages: for example, the EBR systems have difficulty accurately centering substrates for processing without bowing or even breaking the substrate.
Processing an off-centered substrate may cause uneven bevel edge, too thin or too wide bevel edge, incomplete removal, and decrease of valuable surface.
Improper or inaccurate substrate centering can substantially limit the available surface area.
As a result, some of the available surface area may be etched off and some undesired edge bead may remain even after an edge removal process.
This may not only decrease the available surface area but also cause damage in latter processing steps.
Additionally, misprocessing due to too small or too large an edge region may occur because of drifting in the position of the dispensing nozzle.
Furthermore, contaminations or incomplete removal may result particle 120 in the edge region 104 after the edge bevel removal process.
However, separated inspection decreases system efficiency and increases cost of ownership.

Method used

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  • Copper deposition chamber having integrated bevel clean with edge bevel removal detection
  • Copper deposition chamber having integrated bevel clean with edge bevel removal detection
  • Copper deposition chamber having integrated bevel clean with edge bevel removal detection

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Embodiment Construction

[0035] Embodiments of the invention generally provide an edge bevel removal system capable of monitoring substrates being processed in real-time. The invention is illustratively described below in reference to modification of a SlimCell™ system, available from Applied Materials, Inc., Santa Clara, Calif.

[0036]FIG. 3 illustrates an exemplary edge bevel removal system 200 of the present invention. The edge bevel removal system 200 comprises a basin 201 defining a processing volume 208. A substrate chuck 205 is disposed in a central portion of the processing volume 208. The substrate chuck 205 is configured to be rotatable and / or vertically actuatable. In one embodiment, the substrate chuck 205 may be a vacuum chuck having an aperture selectively in fluid communication with a vacuum source.

[0037] The edge bevel removal system 200 may further comprises a substrate centering mechanism configured to adjust a substrate to be processed so that the substrate is substantially centered at a ...

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PUM

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Abstract

Embodiments of the invention generally provide apparatus and method for detecting and controlling edge bevel removal of a semiconductor substrate. One embodiment of the present invention provides an apparatus for inspecting a rotating substrate. The apparatus comprises a substrate support configured to support the rotating substrate on a back side and rotate the substrate about a central axis, and a sensor positioned above the substrate support, the sensor being configured to inspect a front side of the rotating substrate while moving simultaneously radially across the substrate.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] Embodiments of the invention generally relate to an apparatus and method for processing a substrate. More particularly, the present invention relates to detecting and controlling edge bevel removal of a semiconductor substrate. [0003] 2. Description of the Related Art [0004] In semiconductor device manufacturing, a multilayer pattern of conductive, semiconductive, and / or insulating materials is usually generated on a substrate. Multiple deposition processes, such as chemical vapor deposition (CVD), physical vapor deposition (PVD), electrochemical plating (ECP), electroless plating, and / other deposition processes, are generally conducted in a process series to generate the multiplayer pattern. [0005] During a deposition process, a conductive material is deposited on a front surface of a substrate. However, the conductive material may also deposit on edges, and sides, i.e. bevel, of the substrate where no pattern is l...

Claims

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Application Information

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IPC IPC(8): B08B3/02
CPCH01L21/67253H01L21/6708
Inventor CHEN, CHEN-ANNGUYEN, ANH N.BIRANG, MANOOCHER
Owner APPLIED MATERIALS INC