Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure

a technology of imprint lithography and polymer solution, which is applied in the field of polymer solution for nanoimprint lithography, can solve the problems of affecting the pattern accuracy, film shrinkage, and damage to the functional materials of the circuit being manufactured, and achieves the effects of reducing the imprinting temperature and pressure, low pressure, and easy deformation

Inactive Publication Date: 2009-06-25
JUNG GUN YOUNG +3
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent describes a better way to make things by imprinting them onto a substrate. The method involves using a polymer solution that doesn't have any harmful solvents, which makes it easier to create patterns on the substrate. This solution can flow into the tiny openings of the mold and deform easily with low pressure and temperature. The method also involves curing the solution before imprinting to make it easier to create patterns. Overall, this method makes it easier to make things with optical or electron beam lithography techniques.

Problems solved by technology

The high pressure is detrimental to the nanoscale features on the stamp and both the high temperature and the high pressure can damage the functional materials of the circuits being fabricated, such as molecules or nanoscale semiconductor components, exposed to this process.
The unwanted residual solvent in the polymer film results in film shrinkage and possible cracking associated with the solvent evaporation during the heating process, which can cause serious problems in pattern accuracy.
However, these processes suffer from the poor adhesion between polymer and substrate after solvent treatment (case 1) and fast drying of the spun film which also has a poor adhesion to metal due to its solvent nature (case 2).

Method used

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  • Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure
  • Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure
  • Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure

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Embodiment Construction

[0016]Reference is made now in detail to specific embodiments, which illustrates the best mode presently contemplated by the inventors for practicing the invention. Alternative embodiments are also briefly described as applicable.

[0017]The present teachings utilize a polymer solution of at least one appropriate polymer dissolved in a polymerizable monomer or monomer mixture. The polymer solution optionally contains one or more initiators, one or more cross-linkers and / or one or more viscosity modifiers. The monomer may be the same or different from the polymer units. If the monomer is the same, then the final polymer film will be relatively pure polymer that is uniform in composition. If the monomer is different from the polymer units, the resulting film may be a polymer blend (i.e., a physical mixture of two different polymers), an interpenetrating network of two polymers, a copolymer (chemical bonding between the two different types of monomer units), or a block co-polymer (region...

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Abstract

An improved method of forming features on substrates by imprinting is provided. In the method, a polymer solution that contains at least one polymer dissolved in at least one polymerizable monomer and the polymer solution is deposited on the substrate to form a liquid film thereon. Further, the liquid film is cured by causing the at least one monomer to polymerize and optionally cross-linking the at least one polymer to thereby form a polymer film, the polymer film having a glass transition temperature of less than 100° C., and the polymer film is imprinted with a mold having a desired pattern to form a corresponding negative pattern in the polymer film. Alternatively, the liquid film is imprinted with the mold and the liquid film is cured in the presence of the mold to form the polymer film with the negative pattern.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]The present application is a divisional application of application Ser. No. 10 / 313,596, filed Dec. 4, 2002, the entire contents of which are incorporated herein by reference.TECHNICAL FIELD[0002]The present invention is generally directed to the inexpensive manufacturing of systems that have critical dimensions less than 100 nm, such as nano-electronic circuits, nano-electro-mechanical systems (NEMS), optical systems (such as gratings, photonic crystals, and other types of optical couplers and devices), and highly sensitive sensors and detectors based on nanometer scale components. However, the present invention can also be used to fabricate anything that is currently fabricated using optical or electron beam lithography techniques.BACKGROUND ART[0003]Nano-imprint lithography was initiated as an alternative to conventional lithography techniques to achieve nanoscale structures with high throughput and low cost. The nanoscale structures are...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): B44C1/22B29C35/08B29C59/02G03F7/00G03F7/033
CPCB29C35/0888B29C43/003B29C59/022B29C2035/0827G03F7/033B29C2059/023B82Y10/00B82Y40/00G03F7/0002B29C2043/025B82B3/00G03F7/00H01L21/00
InventorJUNG, GUN YOUNGGANAPATHIAPPAN, SIVAPACKIACHEN, YONGWILLIAMS, R. STANLEY
OwnerJUNG GUN YOUNG