Developing solution for photolithography, method for forming resist pattern, and method and apparatus for producing developing solution for photolithography
a technology of developing solution and developing solution, which is applied in the direction of photomechanical equipment, instruments, photosensitive material processing, etc., can solve the problems of complex concentration control of the developing solution, the inability to use the developing solution directly containing the deposited tbah in the development step, and the inability to solve the inability to achieve the effect of suppressing the tbah
Inactive Publication Date: 2011-06-30
TOKYO OHKA KOGYO CO LTD
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Benefits of technology
[0023]In accordance with the present invention, firstly, a developing solution for photolithography is provided in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. In accordance with the present invention, secondly, a developing solution for photolithography is provided in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed in a concentrate
Problems solved by technology
The TBAH deposited in the developing solution is not easily solved again unless warmed or the like.
It is therefore impossible to use directly the developing solution containing the deposited TBAH in a development step and a labor hour of filter t
Method used
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[0100]The developing solution for photolithography of the present invention is more specifically explained with respect to Examples in the following, but the present invention should nevertheless not be limited to Examples below.
TBAH Deposition Preventing Effect by Adding Water-Soluble Organic Solvent
Preparation of Developing Solution
[0101]Developing solutions of Examples 1 to 5 were respectively prepared by dissolving tetrabutylammonium hydroxide (TBAH) and isopropanol (IPA) as a water-soluble organic solvent into purified water (deionized water) in the concentrations shown in Table 1. The numerical values shown in Table 1 are expressed in terms of % by mass. Furthermore, a developing solution of Comparative Example 1 was prepared by dissolving only tetrabutylammonium hydroxide (TBAH) into deionized water in the concentration shown in Table 1. Besides, a developing solution of Comparative Example 2 was prepared by dissolving only tetramethylammonium hydroxide (TMAH) into deionized ...
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Abstract
Firstly, to provide a developing solution for photolithography in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. Secondary, to provide a method for producing a developing solution for photolithography capable of suppressing TBAH deposition when producing the developing solution by diluting a concentrated developing solution containing TBAH and a production apparatus used for the production method. The present invention is firstly a developing solution for photolithography comprising tetrabutylammonium hydroxide (A), and at least one selected from the group consisting of a water-soluble organic solvent (B1), a surfactant (B2), and a clathrate compound (B3). The present invention is secondary characterized by maintaining the temperature of liquid at 27° C. or higher during dilution.
Description
[0001]This application is based on and claims the benefit of priority from Japanese Patent Application Nos. 2009-296434, 2009-296435, 2010-031397 and 2010-240037, respectively filed on 25 Dec. 2009, 25 Dec. 2009, 16 Feb. 2010, and 26 Oct. 2010, the contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a developing solution for photolithography, a method for forming a resist pattern, and a method and an apparatus for producing a developing solution for photolithography.[0004]2. Related Art[0005]Recently, patterns are rapidly becoming finer due to advancement in photolithography technology to produce semiconductor elements or liquid crystal display elements. The fine patterns are achieved by miniaturizing resist patterns formed on surfaces of substrates etc. The resist patterns are prepared by forming a resist film of a resist composition containing a photosensitive compound on a surface ...
Claims
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Patent Timeline
Login to view more IPC IPC(8): G03F7/32B01F15/06B01F23/70
CPCB01F3/088B01F3/20B01F3/2078G03F7/322B01F15/00175B01F15/00207B01F15/00396B01F7/18B01F23/49B01F23/711B01F23/70B01F27/90B01F35/2115B01F35/213B01F35/2215G03F7/004G03F7/075G03F7/42H01L21/0274
Inventor KUMAGAI, TOMOYAUENO, NAOHISAKOSHIYAMA, JUN
Owner TOKYO OHKA KOGYO CO LTD
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