Light emitting diode chip and method for manufacturing the same

Abstract

A method for manufacturing a light emitting diode chip includes following steps: providing a sapphire substrate, the sapphire substrate having a plurality of protrusions on an upper surface thereof; forming an un-doped GaN layer on the upper surface of the sapphire substrate, the un-doped GaN layer having an upper part covering top ends of the protrusions; forming a distributed bragg reflective layer on the un-doped GaN layer until the distributed bragg reflective layer totally covering the protrusions and the un-doped GaN layer; etching the distributed bragg reflective layer and the upper part of the un-doped GaN layer to expose the top ends of the protrusions; and forming an n-type GaN layer, an active layer, and a p-type GaN layer sequentially on the top ends of the protrusions and the distributed bragg reflective layer. An LED chip formed by the method described above is also provided.

Description

BACKGROUND[0001]1. Technical Field[0002]The disclosure generally relates to a light emitting diode (LED) chip, and a method for manufacturing the LED chip, wherein the lattice dislocations and defects are lowered whereby light extraction efficiency is increased.[0003]2. Description of Related Art[0004]In recent years, due to excellent light quality and high luminous efficiency, light emitting diodes (LEDs) have increasingly been used as substitutes for incandescent bulbs, compact fluorescent lamps and fluorescent tubes as light sources of illumination devices.[0005]In epitaxial growth of an LED chip, one problem is how to reduce lattice defects in the semiconductor layers. One way to reduce the lattice defects is to provide a pattered sapphire substrate. By forming a plurality of protrusions on the sapphire substrate, semiconductor layers will be laterally grown from the protrusions, thereby reducing the lattice defects in the semiconductor layers. However, in the process described ...

AI Technical Summary

Benefits of technology

The patent text describes a way to reduce defects in growing LED chips. One way to do this is to create a sapphire substrate with patterns on it. These patterns help the layers grow without defects, but there may still be some lattice defects at the bottom of the patterns. These defects can affect the growth of subsequent layers. The technical effect of this invention is to reduce lattice defects in LED chip production.

Problems solved by technology

In epitaxial growth of an LED chip, one problem is how to reduce lattice defects in the semiconductor layers.

However, in the process described above, the semiconductor layer directly grows from a bottom of the protrusions will still have lattice defects, and the lattice defects are easy to concentrate on a top side of the protrusions to affect growth of following semiconductor layers.

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