Determining Transient Error Functional Masking And Propagation Probabilities

a transient error and probabilistic technology, applied in the field of microelectronic design, can solve problems such as memory glitches, value of output of the combo-gate to be flipped, and disturb an expected functionality of the devi

a transient error and probabilistic technology, applied in the field of microelectronic design, can solve problems such as memory glitches, value of output of the combo-gate to be flipped, and disturb an expected functionality of the devi

US20160370429A9Active Publication Date: 2016-12-22OPTIMA DESIGN AUTOMATION

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Determining Transient Error Functional Masking And Propagation Probabilities
  • Determining Transient Error Functional Masking And Propagation Probabilities
  • Determining Transient Error Functional Masking And Propagation Probabilities

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018]In the present disclosure the term “Transient Error” refers to a logical glitch on the output of a single combo-gate, (e.g., AND-gate, OR-Gate, XOR-Gate, MUX-Gate, or the like) or other kinds of gates. This glitch is temporary value change from 0 to 1 or 1 to 0 for a short period of time (sub-cycle). This glitch may be caused by electromagnetic radiation striking the combo-gate in the digital circuit, such as, a microprocessor, or the like. The bit flip may be a result of the free charge created by ionization in or close to a gate. The TE may occur spontaneously and unexpectedly due to an environment in which the circuit is operated.

[0019]TE may propagate through the combo-logic influenced by the said gate and get sampled (or latched) at one or more memory elements (flip-flop, latch, register or the like). Error Propagated (EP) is when a TE is inflicted at certain gate and the wrong value has propagated to the input of memory elements, and the memory element may sample the wro...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method, system and product for determining transient error functional masking and propagation probabilities. An Error Infliction Probability of pair of nodes (source and destination) is representative of a Transient Error happening on a source node propagating to the destination node. The probability is computed by simulating a propagation of a transient error for plurality of cycles in a given trace. The simulation utilizes values from the trace for nodes that are not influenced by the error (but may influence its propagation). A plurality of cycle-simulations may be performed and a ratio of a number of times the transient error propagated to the destination node compared to a number of cycles examined may be used to compute the error infliction probability.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]The present application claims the benefit of Provisional Patent Application U.S. 62 / 106,305, filed 22 Jan. 2015, and is a continuation in part of patent application U.S. Ser. No. 14 / 601,312 filed Jan. 21, 2015 which is the non-provisional if Provisional Patent Application U.S. 61 / 941,125 filed on Feb. 18, 2014, and a continuation in part of patent application U.S. Ser. No. 14 / 624,603 filed on Feb. 18, 2015, all of which are hereby incorporated in reference in their entirety for all purposes without giving rise to disavowment.TECHNICAL FIELD[0002]The present disclosure relates to microelectronic design in general, and to designing circuit that reduce a risk of soft error as a result of a Transient Error, in particular.BACKGROUND[0003]Transient Error (TE) is when a combinatorial-gate (combo-gate) inside an electronic chip has a glitch on its output, for any reason, one of them is radiation related to cosmic ray and nuclear particles coming ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
22 Dec 2016
Publication
US20160370429A9
IPC
G01R31/317; G01R31/3177
CPC
G01R31/3177; G01R31/31703; G06F30/33; G06F30/20
Inventors
MAZZAWI, JAMIL RAJA; MOUALLEM, AYMAN KAMIL