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Formation of work-function layers for gate electrode using a gas cluster ion beam

a technology of cluster ion beam and gate electrode, which is applied in the field of selective formation of workfunction layers for the gate of a finfet, can solve the problems that chamfering is no longer viable in the industry, and achieve the effect of reducing the size of the industry

Active Publication Date: 2017-08-31
GLOBALFOUNDRIES U S INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As transistor size continues to shrink, so does the space available for the gate stack, which can lead to pinch-off.
However, the industry has reached sizes where chamfering is no longer viable.

Method used

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  • Formation of work-function layers for gate electrode using a gas cluster ion beam
  • Formation of work-function layers for gate electrode using a gas cluster ion beam
  • Formation of work-function layers for gate electrode using a gas cluster ion beam

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Embodiment Construction

[0014]Aspects of the present invention and certain features, advantages, and details thereof, are explained more fully below with reference to the non-limiting examples illustrated in the accompanying drawings. Descriptions of well-known materials, fabrication tools, processing techniques, etc., are omitted so as not to unnecessarily obscure the invention in detail. It should be understood, however, that the detailed description and the specific examples, while indicating aspects of the invention, are given by way of illustration only, and are not by way of limitation. Various substitutions, modifications, additions, and / or arrangements, within the spirit and / or scope of the underlying inventive concepts will be apparent to those skilled in the art from this disclosure.

[0015]Approximating language, as used herein throughout the specification and claims, may be applied to modify any quantitative representation that could permissibly vary without resulting in a change in the basic fun...

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Abstract

An angled gas cluster ion beam is used for each sidewall and top of a fin (two applications) to form work-function metal layer(s) only on the sidewalls and top of each fin.

Description

BACKGROUND OF THE INVENTION[0001]Technical Field[0002]The present invention generally relates to fabricating FinFETs. More particularly, the present invention relates to selective formation of work-function metal for the gate of a FinFET.[0003]Background Information[0004]As transistor size continues to shrink, so does the space available for the gate stack, which can lead to pinch-off. Previously, chamfering of the work-function layers in the gate stack was used to combat pinch-off. However, the industry has reached sizes where chamfering is no longer viable.[0005]Thus, a need exists for a downwardly scalable way to form gate stack work-function layers reducing or eliminating pinch-off.SUMMARY OF THE INVENTION[0006]The shortcomings of the prior art are overcome and additional advantages are provided through the provision, in one aspect, of a method of work-function material deposition. The method includes providing a starting semiconductor structure, the starting semiconductor struc...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/78H01L29/49H01L21/285H01L21/28H01L29/66H01L29/06
CPCH01L29/7851H01L29/66795H01L29/0649H01L29/4966H01L21/28008H01L29/495H01L21/2855H01L29/785H01L29/66803
Inventor WANG, YANZHENHUANG, JIDONGZANG, HUI
Owner GLOBALFOUNDRIES U S INC