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Short detection circuit and short detection method

a short-circuit and detection circuit technology, applied in semiconductor/solid-state device testing/measurement, semiconductor/solid-state device details, instruments, etc., can solve the problem that the test method cannot be used in the high-voltage circuit, the substance has the possibility of short-defect with time passing, and cannot be judged as defectiv

Inactive Publication Date: 2007-06-19
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a short detection circuit and method for high-voltage circuits that can recognize circuits with a high possibility of short-defect with time passing without applying an excessive load to the elements. This helps to prevent defective products from being distributed. The short detection circuit includes a first interconnection, a second interconnection, and a first detecting interconnection positioned between the first and second interconnections. The method includes a step of applying a predetermined value of voltage between the first interconnection and the first detecting interconnection and measuring a current, and a step of judging a possibility of short-circuit by comparing a value of the current measured with a predetermined value.

Problems solved by technology

However, this testing method cannot be used in the high-voltage circuit since the element has a small margin of stress-resistance.
Therefore, the suspected substance having the possibility of the short-defect with time passing due to the conductive foreign matter between interconnections cannot be judged as a defective.
That causes a distribution of defective products.

Method used

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  • Short detection circuit and short detection method
  • Short detection circuit and short detection method
  • Short detection circuit and short detection method

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Experimental program
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first embodiment

[First Embodiment]

[0045]FIG. 3 shows the short detection circuit of the first embodiment. In the short detection circuit, a high-voltage interconnection A and a high-voltage interconnection B are provided on a substrate. In FIG. 3, the interconnection A and the interconnection B are parallel. The potential of the interconnection A and the potential of the interconnection B may be different. A high-voltage interconnection means the interconnection to which the voltage of tens of volts or more is applied in usual operations.

[0046]A detection-dedicated interconnection 001 is provided between the high-voltage interconnections A and B. The interconnection 001 is not connected with the interconnection A and B. The interconnection 001 has a terminal unit to which external devices exemplified by an ammeter and a power supply can be connected. In FIG. 3, the interconnection 001, interconnections A and B are parallel to each other. The detection-dedicated interconnection 001 is manufactured i...

second embodiment

[Second Embodiment]

[0053]FIG. 9 shows a circuit in a second embodiment. A high-voltage interconnection A and a high-voltage interconnection B that is arranged in parallel to the high-voltage interconnection A are shown in FIG. 9. The potential of the interconnection A and the potential of the interconnection B may be different. A detection-dedicated interconnection 002 is provided between the high-voltage interconnection A and the high-voltage interconnection B. A detection-dedicated line 003 is provided between the detection-dedicated interconnection 002 and the high-voltage interconnection B. The interconnection 002 is not connected to the interconnections A and B. The interconnection 003 is not connected to the interconnections A, B and 002.

[0054]The interconnection 002 has a terminal unit to which external devices exemplified by an ammeter and a power supply can be connected. The interconnection 003 has the same kind of terminal.

[0055]The distance between the high-voltage interc...

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Abstract

A circuit and method for judging a latent short-circuit defect, also known as a short-circuit defect with time passing, in the case of a high voltage system. A detection-dedicated wiring for detecting a short-circuit defect is provided between a first high voltage system wiring and a second high voltage wiring. A power supply and an ammeter is connected in series and one end of it is connected to the high voltage system wiring and the other end of it is connected to the detection-dedicated wiring. If a current value us higher than a predetermined value when the power supply is turned on, one can judge that the circuit has a high possibility of the latent short-circuit defect.

Description

BACKGROUND OF THE INVENTION [0001]1. Field of the Invention[0002]The present invention relates to a technique for detecting a short-circuit between interconnections of a semiconductor device.[0003]2. Description of the Related Art[0004]In the interconnections of the circuit in a semiconductor device and the like, a short-circuit is generated due to the contact of a conductive foreign matter with an interconnection and the other interconnection. This leads to the defect of a circuit. Even if the circuit is not judged as defective before shipping, there is a possibility that the circuit become defective depending on various conditions.[0005]FIG. 1 is the plane view of a suspected substance. In FIG. 1, a conductive foreign matter 101 exists between a high-voltage interconnection A and a high-voltage interconnection B. The electric potential of the interconnection A and that of the interconnection B may be set in different. In this case, the high-voltage interconnection A and the high-v...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): G01R31/02G01R31/26H01L21/66H01L21/822H01L23/544H01L27/04H01L29/00
CPCH01L22/34H01L2924/0002H01L2924/00
Inventor SUZUKI, YUZO
Owner RENESAS ELECTRONICS CORP