2 results about "Small peak" patented technology

Embodiments of the present disclosure relate to a method, medium and device for reducing a peak-to-average ratio of an orthogonal frequency division multiplexing system. The method comprises: receiving original data of a signal to be transmitted; generating a first carrier signal of the orthogonal frequency division multiplexing system according to the original data; generating a plurality of mutually independent second carrier signals through a generative adversarial network according to the first carrier signal; calculating peak-to-average ratios of the plurality of mutually independent second carrier signals, and selecting a second carrier signal with the smallest peak-to-average ratio for transmission; wherein the first carrier signal and the second carrier signal both carry information of the original data. The present disclosure generates a plurality of carrier signals with the same information through a generative adversarial network for calculation and comparison of peak-to-average ratios, selects a second carrier signal with the smallest peak-to-average ratio for transmission, and thus reduces the peak-to-average ratio. Since point multiplication of a frequency domain signal and a phase rotation factor and large-scale inverse fast Fourier transform operations are not required, the computational complexity is greatly reduced.

To easily correct the position of leads in semiconductor devices. [Solution] In the photoelectron spectrum on the Si side (center), there is no significant difference for (5) to (8), which correspond to a region deeper than the center of the Ni silicide layer. However, in (1) to (4), which are shallower and within 50 nm from the surface, in Example (b), the Ni in the photoelectron spectrum... x In comparative example (a), a region of localized high intensity (small peak) is observed at higher energies than the main peak corresponding to Si, whereas these small peaks are not visible in comparative example (a). The energy in this region corresponds to SiO2 and SiO2. x This corresponds to (x<2). In other words, in Example (b), silicon oxide is formed at these depths, whereas in Comparative Example (a), such silicon oxide is not formed.