The invention discloses a
triphenylamine gallium porphyrin complex and application of the
triphenylamine gallium porphyrin complex as a
hole transport layer material. The structure of the complex is shown in the following formula, wherein R represents methoxy, methylthio or
hydrogen. The complex has an
energy level better matched with a
perovskite layer and better intrinsic hole transport characteristics, and under the condition that no chemical
doping is needed, a formal (n-i-p)
perovskite solar cell prepared from the complex obtains 16.25% of
photoelectric conversion efficiency and is comparable with an early-stage doped Spiro-OMeTAD
system. The
lithium salt and the organic
dopant which are easy to absorb
moisture and migrate are completely abandoned, so that the problem of
device degradation caused by the
lithium salt and the organic
dopant is radically eliminated, and the long-term stability of the device under hot, wet and running conditions is synchronously and greatly improved; the preparation process is greatly simplified, the
process window is obviously widened, the production
repeatability and the yield are improved, and by omitting expensive dopants and simplifying production steps and
quality control links, the material and process cost is directly reduced, and the industrial application potential is improved.