The invention relates to an integrated high-
voltage semiconductor device structure and a manufacturing method thereof. The device comprises an N-type epitaxial layer on an N-type substrate, drain
electrode metal is arranged on the back surface of the N-type epitaxial layer, the structure of the device is divided into an M1 device region, an M2 device region and an isolation region, P-type columns are arranged in the N-type epitaxial layer, and a P-type
body region is arranged above the P-type columns and is connected with N-type and P-type source electrodes with different
doping; an M2 device region is provided with a threshold adjustment region, and the surface of the device is covered with a
gate oxide layer and a
polycrystalline silicon gate; the
dielectric layers are respectively distributed in each region; the M1 source
electrode metal and the M2 source
electrode metal are connected with the source electrode of the P-type
body region; the isolation region is provided with a
diode,
anode metal is connected with an N-type source electrode,
cathode metal is connected with a P-type source electrode, or second grid
polycrystalline silicon is arranged and is respectively connected with heavily-doped N-type
polycrystalline silicon, heavily-doped P-type polycrystalline
silicon and
cathode and
anode metal. According to the invention, the loss of circuit topology is reduced, and the
system efficiency and integration are improved.