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Once write film storage

A technology of memory cells and memory elements, applied in static memory, read-only memory, digital memory information, etc., can solve the problem that EPROM and fuse programmable devices are not easy to integrate, and do not provide high density and low cost of MRAM and polymer memory devices. Voltage characteristics, etc.

Inactive Publication Date: 2008-04-09
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But EPROM and fuse programmable devices do not offer the high density and low voltage characteristics of MRAM and polymer memory devices
Also, EPROM and fuse programmable devices are not easily integrated with MRAM and polymer memory devices

Method used

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  • Once write film storage
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Examples

Experimental program
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Embodiment Construction

[0018] As shown in the accompanying drawings for illustration purposes, the present invention is embodied in a data storage device including an array of thin film memory cells and circuitry for reading and writing the memory cells. A write operation can be performed by damaging the thin film isolation layers of at least some of the memory cells.

[0019] refer to figure 1 , which illustrates a data storage device 8 including a resistive crosspoint array 10 of thin film memory cells 12 . The memory cells 12 are arranged in rows and columns, with the rows extending in the x-direction and the columns extending in the y-direction. To simplify the explanation of the device 8, only a relatively small number of memory cells 12 are shown. Virtually any size array can be used.

[0020] The traces used as word lines 14 extend in-plane along the x-direction on one side of the array 10 . The traces used as bit lines 16 extend in-plane along the y-direction on the other side of the arr...

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PUM

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Abstract

A data storage device (8, 210, 310) includes a group of memory cells (12, 110, 312) and write-once operations may be performed by damaging the thin-film barriers (36) of at least some of the memory cells (12, 110, 312). The data storage device (8, 210, 310) may be a Magnetic Random Access Memory ('MRAM') device.

Description

technical field [0001] The present invention relates to data storage devices. In particular, the present invention relates to write-once thin film data storage devices. Background technique [0002] New types of non-volatile thin film memory include random access magnetic memory ("MRAM") based on spin-dependent tunneling ("SDT") junctions. A typical SDT junction has a pinned ferromagnetic layer, a sensing ferromagnetic layer, and a thin insulating tunnel isolation layer sandwiched between the ferromagnetic layers. A logic value can be written to the SDT junction by applying a magnetic field to set the magnetization orientation of the SDT junction to be parallel (logic value "0") or antiparallel (logic value "1"). The relative orientation and spin polarization of the ferromagnetic layers determine the resistance state (R or R+ΔR) of the SDT junction. The logic value stored in the SDT junction can be read by detecting the resistance of the SDT junction. [0003] Another ty...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C17/00G11C13/00G11C11/14G11C11/15
CPCG11C17/146G11C11/14G11C11/15
Inventor F·A·佩尔纳T·C·安东尼
Owner SAMSUNG ELECTRONICS CO LTD
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