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Bias compensation circuit for adjusting transconductance variation range of transistor in load

A technology of load transistors and compensation circuits, applied in the direction of adjusting electrical variables, electrical components, control/regulation systems, etc.

Inactive Publication Date: 2008-05-07
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

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  • Bias compensation circuit for adjusting transconductance variation range of transistor in load
  • Bias compensation circuit for adjusting transconductance variation range of transistor in load
  • Bias compensation circuit for adjusting transconductance variation range of transistor in load

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Embodiment Construction

[0025] exist figure 2 In A, is a widely used current mirror for current biasing; figure 2 In B is a current mirror with added current compensation. Among them, MN4 is the transistor we need to keep its transconductance stable, transistors MN2 and MN3 are biased current mirrors, transistor MN1, resistor R1 and resistor R2 form the compensation circuit we recommend. The drain-source current of the MOS transistor (I DS ) and transconductance (g m ) can be expressed as (see literature Razavi, B.: 'Design of Analog CMOS Integrated Circuits', McGraw.Hill Companies, Inc., 2001.):

[0026] I DS = 1 2 · K · ( V GS - V TH ) 2 · ( 1 + ...

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Abstract

A current mirror regulating trans-conductance variable sphere in load characterizes that its bias current source output end is parallel to a NMOS transistor to the earth, the grid of the transistor is connected with the central point of a resistor bleeder branch to make up of a bias compensation circuit, which can reduce the trans-conductance variance by 41.4% compared to NMOS transistors without said compensation in a LC oscillator.

Description

technical field [0001] A bias compensation circuit for adjusting the range of transconductance variation of a transistor in a load belongs to the technical field of transconductance adjustment of a load transistor in a CMOS integrated circuit. Background technique [0002] The fluctuation of process parameters due to the inconsistency of the manufacturing steps, the change of the ambient temperature of the circuit and the change of the power supply voltage will cause the performance of the circuit to fluctuate around its nominal value. In the integrated circuit design process, the circuit performance is required to be relatively stable when the process, power supply voltage, and ambient temperature (Process, Supply Voltage, and Temperature, PVT) change, so as to avoid the reduction of the pass rate of the circuit. [0003] In some circuits such as LC oscillators, the transconductance of transistors is a key intermediate performance indicator (see references: Ham, D., and Haj...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05F3/24G05F3/26H03B5/08
Inventor 冒小建杨华中汪蕙
Owner TSINGHUA UNIV