Dry etching device

Abstract

The dry etching device with plasma comprises a vacuum cavity with an upper and a lower electrode plate, a vacuum discharging zone for plasma between the two plates, a power source electric connected to the said plates to provide the require potential difference; and a gas output to connect with vacuum cavity and system and maintain plasma state, and it has a resin layer to avoid the etching effect; wherein, there is at least one gas inlet on upper plate to transmit gas.

Description

technical field [0001] The invention relates to a dry etching device, in particular to an air hole device installed in the dry etching device. Background technique [0002] The so-called dry etching (Dry Etching) is a technology of thin film etching with plasma (Plasma). Since the dry etching mainly utilizes the physical phenomenon of particle bombardment for etching, the etching rate of the dry etching in the vertical direction is much higher than that in the lateral direction. Therefore, anisotropic etching is often performed by means of a dry etching process in a thin film process. [0003] A general dry etching device is mainly composed of a vacuum chamber, an upper electrode plate, a lower electrode plate, a plasma vacuum discharge area, a power supply and a gas outlet. Wherein, the upper electrode plate is installed in the vacuum chamber, and has a gas inlet on it, and the gas inlet is used for introducing process gas. Traditionally, the upper electrode plate is mad...

AI Technical Summary

Problems solved by technology

This will cause problems such as gas inlet tip discharge and particle contamination in the vacuum chamber

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