Method for manufacturing high-temp PTC thermosensitive resistor
A technology of thermistor and manufacturing method, applied in the direction of resistors with positive temperature coefficient, etc., can solve the problems of affecting the normal operation of electrical equipment, inconsistent resistance changes, wide distribution of resistance at room temperature, etc., to eliminate NTC phenomenon, resistance changes, etc. The effect of uniform rate and room temperature resistance
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Publication Date
- 2008-10-15
Abstract
Description
technical field
[0001] The invention discloses a method for manufacturing a high-temperature PTC thermistor, and relates to a method for manufacturing electronic components with crystal, semi-crystalline high polymers and blends thereof as main raw materials. Background technique
[0002] Polymer PTC thermistors are widely used in many fields such as communications, computers, automobiles, industrial controls, and household appliances. Most of the polymer PTC thermistors produced by existing raw materials and manufacturing methods have the disadvantages of low transition temperature, wide distribution of room temperature resistance, inconsistent resistance changes during use, and prominent NTC phenomenon at high temperatures. normal operation of electrical equipment. In order to overcome the defects in the above-mentioned technologies, the present invention proposes a new technical solution. Contents of the invention
[0003] The purpose of the present invention is to pr...
Examples
Embodiment Construction
[0008] Polyvinylidene fluoride, carbon black, magnesium hydroxide, anti-aging agent, and coupling agent are melted and mixed into a core material through an internal mixer and an open mill, and the metal electrode sheets are compounded on both sides of the core material by a press, and then punched Punched into chips with a size of 10×14mm, first place them in an oven at 180°C for 45 minutes, then slowly cool them to room temperature, take them out and place them for 24 hours, and then irradiate them with electron beams for 150KGy, and then place them at 180 ℃ oven for 45 minutes, then slowly cooled to room temperature, placed for 24 hours and cross-linked with electron beam irradiation, irradiation dose 170KGy. Measure its room temperature resistance value, the average resistance value R of the sample resistance 0 29mΩ, the resistance value is 27mΩ~31mΩ(R 0 The percentage (yield rate) of samples within the range of ±2mΩ) is 95%. Take 10 samples, shock 1000 times with 42V, 10...