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65results about How to "Crystallization perfect" patented technology

Metal oxide nanoparticles and preparation method of metal oxide nanoparticles

The invention discloses a metal oxide nanoparticle and a preparation method of the metal oxide nanoparticle, which comprises the following steps: preparing an organosol containing the metal element, mixing the organosol with a water-soluble salt, performing standing or centrifuging to precipitate the water-soluble salt, removing the superfluous organosol at the upper part, and keeping the temperature to convert the organosol into gel; along with evaporation of the solvent, shrinking the gel, and coating the surfaces of the water-soluble salt particles with a layer of xerogel film; and calcining the sample at a high temperature between 400 DEG C and a salt melting point, converting the dry gel film into metal oxide nanoparticles, dispersing and attaching the nanoparticles to the surfaces ofwater-soluble salt particles, cooling, and washing with water to remove the salt, thereby obtaining the high-dispersion metal oxide nanoparticles; if the calcined product is reduced in a reducing atmosphere, converting the metal oxide nanoparticles attached to the surfaces of the water-soluble salt particles into corresponding metal nanoparticles, cooling, and washing with water to obtain the high-dispersion metal nanoparticles. According to the method, the high-crystallinity and high-dispersion metal oxide and metal nanoparticles can be rapidly prepared in batches.
Owner:SOUTHEAST UNIV

Polyetheretherketone hollow fiber preparation method

The invention relates to a polyetheretherketone hollow fiber preparation method and belongs to the technical field of organic fiber preparation. The problem that polyetheretherketone fibers prepared by a hollow fiber preparation method in the prior art is mainly to be solved. The polyetheretherketone hollow fiber preparation method includes subjecting special spinning-class polyetheretherketone to melt extrusion by a screw in an extruder, using a melt dosing pump for controlling the discharge amount, filtering melts through a filtering system of a component, and forming polyetheretherketone hollow fiber strips through a hollow spinneret plate; drafting the polyetheretherketone hollow fiber strips, cooling according to different cooling modes, and using a winding device for collecting as-spun fibers; guiding the as-spun fibers into a hot-drawing sizing device so as to obtain polyetheretherketone hollow fibers. The polyetheretherketone hollow fiber preparation method is simple, convenient and high in universality. The polyetheretherketone hollow fibers prepared by the preparation method have the advantages of high quality stability, high strength, high tenacity, high uniformity, excellent wear resistance and the like, and can be used for wear-resisting fabrics, thermal protection, lightweight materials and the like, thereby being quite promising in application prospect.
Owner:SINO HIGH CHINA

Method for improving long-afterglow characteristics of silicate phosphor powder by means of Li<+> co-doping

InactiveCN107129801AImproved long persistence characteristicsRich oxygen vacanciesLuminescent compositionsOxygen vacancyChemistry
The invention provides a method for effectively improving the afterglow intensity of Sr<2>MgSi<2>O<7>:<x>Eu<2+>, <y>Dy<3+> phosphor powder and prolonging the afterglow time of the Sr<2>MgSi<2>O<7>:<x>Eu<2+>, <y>Dy<3+> phosphor powder by means of do-doping by the aid of Li<+>. The method has the advantages that Sr<2+> sites can be replaced by the Li<+> to form Li'Sr with monovalent negative charge during Li<+> co-doping, and accordingly oxygen vacancy with positive charge can be correspondingly generated to complement charge difference and can be used as a trap for capturing electrons and holes in excited states; captured electrons and holes can be gradually released for heat energy and can be recombined with one another, and phosphorescence can be released and is long-afterglow; oxygen vacancy can be continuously increased along with Li<+> doping, captured electrons can be continuously increased, and accordingly the long-afterglow time can be effectively prolonged; the Li<+> is used for compensating charge, and accordingly the charge is in compensation balance when bivalent Sr<2+> is replaced by trivalent Dy<3+>; the Li<+> further can be used as a fluxing agent, the crystallinity of crystals can be effectively improved, the particle sizes of the crystals can be increased, accordingly, crystallization can be improved, and the luminescence intensity of the long-afterglow can be ultimately improved.
Owner:XUZHOU NORMAL UNIVERSITY

ITO (Indium Tin Oxide) conducting film for touch screen and preparation method thereof

The invention relates to the technical field of conducting films of touch screens, and particularly relates to an ITO (Indium Tin Oxide) conducting film for a touch screen and a preparation method thereof. The ITO conducting film comprises a resin matrix of 100-150 micrometers, a first ITO layer of 8-10 nanometers, a second ITO layer of 6-8 nanometers, a third ITO layer of 4-6 nanometers and a fourth ITO layer of 2-4 nanometers, wherein the first ITO layer, the second ITO layer, the third ITO layer and the fourth ITO layer are sequentially deposited on the resin matrix. According to the invention, the resin matrix is heated to 200-240 DEG C every time through four layered deposition and four crystallization processes, and the recrystallization temperature 150 DEG C of the ITO layers is achieved, so that the ITO can be subjected to a crystallization process after being deposited every time, and the perfect crystallization of the ITO layer is effectively promoted; in order to reduce the influence of thickness on the crystallization, the thicknesses of the first ITO layer, the second ITO layer, the third ITO layer and the fourth ITO layer are sequentially reduced. In conclusion, the prepared ITO conducting film for the touch screen has the advantages of high transmittance, low resistivity and good chemical stability.
Owner:DONGGUAN PINGBO ELECTRONICS

Preparation method and system of ammonium adipate

The invention relates to a preparation method and a preparation system of ammonium adipate. The preparation method comprises the following steps: enabling adipic acid in a reaction kettle to react with gasified ammonia gas; controlling the reaction temperature at 60-70 DEG C; monitoring whether the pH value of a solution reaches a reaction endpoint, opening a lid at a tank hole of the reaction kettle, carrying out sampling for reaction, stopping the introduction of ammonia, continuing to react for 1-1.5 hours, and introducing cooling water for cooling; after the temperature is decreased to bebelow 40 DEG C, carrying out sampling, starting discharging while detecting that the content of crystals is 50% or above, and carrying out solid-liquid separation by virtue of a centrifugal machine; and directly introducing the crystals into a vibrated fluidized bed drying machine, drying, and sieving by virtue of a screen, so as to obtain a finished product. The invention further provides a preparation method for preparing ammonium adipate by virtue of the preparation method. The ammonium adipate product prepared by virtue of the preparation method is white powder or a transparent crystal andhas low toxicity; and the product has good dissolving property in glycol and water, can be used as formation and middle-low-voltage electrolyte solute in the production processes of low-pressure aluminum foils and solid-state capacitors, and a water solution can be used as an electrifying agent for middle-high-pressure aluminum foils.
Owner:NINGXIANG XINYANG CHEM
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