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Method for RTA constant temperature measurement and its used measurement and control wafer

A wafer and polysilicon layer technology, applied in semiconductor/solid-state device testing/measurement, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as scrapping, inaccurate product temperature measurement and control, and achieve the effect of maintaining stability

Inactive Publication Date: 2009-08-19
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This problem will only appear when the RTA equipment processes product wafers (emissivity range 0.4 to 0.95), resulting in a large number of products being scrapped due to inaccurate temperature measurement and control

Method used

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  • Method for RTA constant temperature measurement and its used measurement and control wafer
  • Method for RTA constant temperature measurement and its used measurement and control wafer

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Embodiment Construction

[0014] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0015] The method for carrying out RTA temperature control measurement of the present invention, at first develop two kinds of new measurement and control wafers with different crystal back emissivity, a kind of by adding Si Nitride (silicon nitride) layer on the wafer back, make its emissivity can be reduced to 0.35 , this kind of chip is a low emissivity measurement and control chip, and its preparation process is shown in Table 1 below; another kind of chip can increase its emissivity to 0.95 by adding a POLY layer on the back of the wafer, and this kind of chip is a high emissivity measurement and control chip , and its preparation process is shown in Table 2 below.

[0016] Table 1 Manufacturing process of low emissivity measurement and control chip

[0017] Preparation step number

[0018] Table 2 Preparation process ...

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Abstract

The invention discloses a method for RTA temperature control measurement. The method comprises the steps of: preparing two kinds of measurement and control chips, one is a low emissivity measurement and control chip, and the other is a high emissivity measurement and control chip; at the same time, the low emissivity measurement and control chip is used The chip and the high emissivity measurement and control chip measure the RTA equipment. The invention also discloses a measurement and control chip used in the above method, which is formed by changing the material of the back surface of the chip. The method of the invention can take into account both low and high emissivity, makes it easier to find problems in the emissivity measurement and calculation of RTA equipment, and can better maintain the stability of the equipment.

Description

technical field [0001] The invention relates to the technical field of chip manufacturing, in particular to a method for performing RTA (Rapid Thermal Annealing, rapid thermal annealing) temperature control measurement. The invention also relates to a special measurement and control wafer for RTA temperature control measurement. Background technique [0002] The current general method for monitoring the stability of RTA equipment in the industry is to use an ion-implanted wafer (referred to as "measurement and control wafer") to perform rapid heat treatment on the RTA equipment to activate the doped ions, and then measure the wafer after rapid thermal treatment. sheet resistance value. The accuracy and stability of RTA temperature control are reflected by the measured resistance value. The higher the measured resistance, the lower the RTA temperature, and vice versa. [0003] There are serious shortcomings in this monitoring method. Because the temperature measurement of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/66
Inventor 许世勋朱琳
Owner SEMICON MFG INT (SHANGHAI) CORP
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