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Method for RTA constant temperature measurement and its used measurement and control wafer

A wafer, low-radiation technology, used in semiconductor/solid-state device testing/measurement, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as scrapping, inaccurate product temperature measurement and control, and achieve the effect of maintaining stability

Inactive Publication Date: 2008-02-13
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This problem will only appear when the RTA equipment processes product wafers (emissivity range 0.4 to 0.95), resulting in a large number of products being scrapped due to inaccurate temperature measurement and control

Method used

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  • Method for RTA constant temperature measurement and its used measurement and control wafer

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Embodiment Construction

[0014] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0015] The method for carrying out RTA temperature control measurement of the present invention, at first develop two kinds of new measurement and control wafers with different crystal back emissivity, a kind of by adding Si Nitride (silicon nitride) layer on the wafer back, make its emissivity can be reduced to 0.35 , this kind of chip is a low emissivity measurement and control chip, and its preparation process is shown in Table 1 below; another kind of chip can increase its emissivity to 0.95 by adding a POLY layer on the back of the wafer, and this kind of chip is a high emissivity measurement and control chip , and its preparation process is shown in Table 2 below.

[0016] Table 1 Manufacturing process of low emissivity measurement and control chip

[0017] Preparation step number

[0018] Table 2 Preparation process ...

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Abstract

The present invention discloses a method for RTA temperature control measurement, which comprises the following steps: two measuring and controlling chips are prepared, one is a low emissivity chip, the other one is a high emissivity chip; the two chips are to be used simultaneously for measuring RTA equipment. In addition, the present invention also discloses a measuring and controlling chip used in the method, which is formed by changing the back material of the chip. The present invention is capable of balancing both the low end and the high end of the emissivity, and is more likely to discover the problems in RTA equipment emissivity calculation, thereby maintaining a more steady equipment operation.

Description

technical field [0001] The invention relates to the technical field of chip manufacturing, in particular to a method for performing RTA (Rapid Thermal Annealing, rapid thermal annealing) temperature control measurement. The invention also relates to a special measurement and control wafer for RTA temperature control measurement. Background technique [0002] The current general method for monitoring the stability of RTA equipment in the industry is to use an ion-implanted wafer (referred to as "measurement and control wafer") to perform rapid heat treatment on the RTA equipment to activate the doped ions, and then measure the wafer after rapid thermal treatment. sheet resistance value. The accuracy and stability of RTA temperature control are reflected by the measured resistance value. The higher the measured resistance, the lower the RTA temperature, and vice versa. [0003] There are serious shortcomings in this monitoring method. Because the temperature measurement of...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/66
Inventor 许世勋朱琳
Owner SEMICON MFG INT (SHANGHAI) CORP
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