Method for measuring Cube-Prism non-orthogonality angle and scale factor correct value

A scaling and non-orthogonal technology, which is applied in the field of semiconductor manufacturing, can solve problems such as limitations in the use of lithography machines, and achieve the effect of simple marking design

Active Publication Date: 2009-11-11
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention provides a method for measuring the non-orthogonal angle of the square mirror and the correction value of the scaling factor in order to solve the shortcomings of the existing measurement method that has limitations in the use of photolithography machines

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for measuring Cube-Prism non-orthogonality angle and scale factor correct value
  • Method for measuring Cube-Prism non-orthogonality angle and scale factor correct value
  • Method for measuring Cube-Prism non-orthogonality angle and scale factor correct value

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] A method for measuring the non-orthogonal angle of a square mirror and the correction value of the scaling factor of the present invention will be described in detail below in conjunction with specific embodiments.

[0027] Wherein the lithography machine system used in the present invention for exposure and alignment measurement is as figure 2 As shown, it includes: an illumination system 1, a mask stage 3 carrying a mask 2, an optical system 4 for mask imaging, a workpiece stage 7 carrying a silicon wafer 6, an alignment system 5 for off-axis alignment, An X-direction interferometer 8 and a Y-direction interferometer for monitoring the movement position of the workpiece table.

[0028] In the present invention, two alignment marks on the mask are used for exposure, mark A and mark B, mark A and mark B are off-axis alignment marks of the same type, which measure the square mirror non-orthogonality angle and the scaling factor correction value The specific steps are: ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A method for measuring the non-orthogonality angle of a square mirror and the correction value of the scaling factor, comprising, through a photolithography machine system, exposing the marked pattern A on the mask to a glue-coated blank silicon wafer according to the specified pattern distribution, and exposing After the completion, unload the film; rotate the silicon wafer at a certain angle and reload the film, and then expose the marking pattern B on the mask to the silicon wafer according to the same pattern distribution, and the position of the exposure mark is biased relative to the first layer. After the exposure is completed, develop; load the film again, but do not rotate, and after the off-axis alignment system of the lithography machine aligns the marks on the silicon wafer, read all the mark positions; calculate according to the measured mark position Obtain the non-orthogonal angle and scaling factor of the workpiece table coordinate system. This measurement method is an absolute measurement method, which is applicable to different lithography machine systems.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for measuring the non-orthogonal angle of a square mirror and the correction value of a scaling factor. Background technique [0002] Because there is a certain mechanical deviation when the X square mirror and Y square mirror of the workpiece table are installed, the X square mirror and Y square mirror in the actual lithography machine system are not absolutely vertical, which leads to the establishment of the workpiece table coordinate system (coordinate system y axis Parallel to the X square mirror) there is non-orthogonality. When the workpiece table scans and exposes along the X and Y axes, the resulting graphics will appear distorted. In addition, due to the mismatch between the X and Y direction interferometers of the workpiece table, the scaling ratio between the X-axis and Y-axis coordinates will be different. [0003] The commonly used method to det...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G03F9/00
Inventor 李煜芝
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap