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Semiconductor device and method for fabricating the same

A manufacturing method and semiconductor technology, which are applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, and semiconductor/solid-state device components, etc., and can solve the problems of complex processes and increased manufacturing costs.

Inactive Publication Date: 2009-11-25
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In the above-mentioned prior art, since the technology (RIE, CVD, CMP, etc.) of the semiconductor pre-process is used to form the through-hole electrode, not only the process is very complicated and requires advanced technology, but also there is a problem that the manufacturing cost increases

Method used

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  • Semiconductor device and method for fabricating the same
  • Semiconductor device and method for fabricating the same
  • Semiconductor device and method for fabricating the same

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Embodiment Construction

[0019] Embodiments of the present invention will be described below with reference to the drawings.

[0020] figure 1 Schematically showing the structure of a semiconductor device according to an embodiment of the present invention, figure 2 , image 3 Schematically express figure 1 The fabrication method of the semiconductor device shown. First, refer to figure 2 , image 3 A method of manufacturing a semiconductor device according to this embodiment will be described.

[0021] exist figure 2 In (a), 1 denotes a semiconductor wafer, and this semiconductor wafer 1 is bonded to a support plate 21 with an adhesive 20 on its surface (semiconductor element surface on which semiconductor circuit elements are formed) 2 . The support plate 21 may be directly used as a part of the package, or the support plate 21 may be peeled off at the end. In addition, in figure 2 In (a), 3 denotes the back surface of the semiconductor wafer 1 , and 4 denotes metal bumps formed on th...

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PUM

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Abstract

A semiconductor device comprising: a semiconductor substrate having electrode pads formed on the surface side; through-hole electrodes having: through-holes formed to reach metal bumps formed on the electrode pads from the back surface side of the semiconductor substrate , an insulating resin formed to cover the inner wall of the through hole, and formed in the through hole in a state of being insulated from the semiconductor substrate by the insulating resin, and connecting the electrode pad to the conductors electrically connected to the back side of the semiconductor substrate; semiconductor chips mounted on the back side of the semiconductor substrate with their back faces facing each other; and wirings electrically connecting the through electrodes and electrodes formed on the semiconductor chips .

Description

[0001] Cross References to Related Applications [0002] The present invention is based on and claims priority to Japanese Patent Application No. 2006-107249 filed on April 10, 2006, and Japanese Patent Application No. 2006-268342 filed on September 29, 2006, and The entire content of this original patent application is hereby incorporated by reference. technical field [0003] The present invention relates to a semiconductor device and a manufacturing method thereof, and particularly to a semiconductor device having a through-electrode penetrating a semiconductor substrate and a manufacturing method thereof. Background technique [0004] Various devices using semiconductor devices, such as next-generation mobile phones, digital cameras and other small mobile products that are expected to have significant market growth in the future, will be accompanied by the further advancement of miniaturization and multifunctionality, as well as the emergence of high performance and high...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/00H01L25/065H01L25/10H01L23/48H01L21/60
CPCH01L2924/0002H01L24/18H01L21/76898H01L2224/04105H01L2224/12105H01L2224/19H01L2224/32225H01L2224/73267H01L2224/92244H01L2224/18H01L2924/00012
Inventor 关口正博高桥健司沼田英夫白河达彦佐藤二尚
Owner KK TOSHIBA