Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Planar inorganic device

An inorganic, planar technology that can be used in instruments, optical components, optomechanical equipment, etc., to solve difficult problems and achieve the effect of maintaining speed, optimization of mechanical and dielectric properties, and ease of processing

Inactive Publication Date: 2009-12-23
3M INNOVATIVE PROPERTIES CO
View PDF35 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to fabricate inorganic devices with dimensions suitable for mode-matching with single-mode or multimode optical fibers using sol-gel methods.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Planar inorganic device
  • Planar inorganic device
  • Planar inorganic device

Examples

Experimental program
Comparison scheme
Effect test

preparation Embodiment 1

[0192] The sensitizing dye, bis-[4-(diphenylamino)styryl]-1-(2-ethylhexyloxy), 4-(methoxy)benzene, was prepared as follows:

[0193]

[0194] 1-methoxy-4-(2-ethylhexyloxy)benzene (1)

[0195] A mixture of 4-methoxyphenol (100.0 g, 0.8 mol), dry potassium carbonate (166.7 g, 1.2 mol), acetonitrile (800 mL) and 2-ethylhexyl bromide (173.8 g, 0.9 mol) was mechanically stirred, and Reflux for 4 days. After cooling, the mixture was diluted with water (1.5 L) and the organic phase was separated. The aqueous layer was extracted with hexane, and the combined organic layers were washed with 1.0 mol / L NaOH and water. with MgSO 4 After drying, the solvent was removed under reduced pressure to yield an orange oil. The crude product was distilled under reduced pressure to yield 152 g (80%) of a clear oil (bp 135-138°C at 0.4 mm Hg).

[0196] 2,5-bis(bromomethyl)-1-methoxy-4-(2-ethylhexyloxy)benzene (2)

[0197] 1-Methoxy-4-(2-ethylhexyloxy)benzene (50.0 g, 0.21 mol), paraformaldeh...

preparation Embodiment 2

[0203] The preparation method of the silica-epoxy resin sol containing the colloidal silica of various particle diameters is demonstrated.

[0204] Formula A

[0205] 245 grams of NALCO 2327 solution (a 41% aqueous dispersion of silica with a particle size of approximately 20 nm obtained from Ondeo Nalco, Bedord Park, IL) was placed in a round bottom flask with moderate agitation. A premixed solution of 500 grams of 1-methoxy-2-propanol and 12.34 grams of trimethoxyphenylsilane (0.62 millimoles of silane per gram of silica) was added over a period of 5-10 minutes. The resulting non-aggregated solution was heated at 90-95°C for about 22 hours, and dried to form a white powder. The treated silica (100 grams of silica in 300 grams of water) was added to deionized water, vigorously stirred for 3-4 hours, and then allowed to stand overnight at room temperature. Silica was filtered, rinsed several times with deionized water and dried.

[0206] The treated silica was dispersed in ...

Embodiment 3

[0223] This example illustrates the photopatterning of a silica-epoxy sol containing 20 nm colloidal silica. Silicon wafers were cleaned by immersing in a 3:1 mixture of sulfuric acid (98% in water) and hydrogen peroxide (30% in water) for 10 minutes, rinsed thoroughly with deionized water, rinsed with isopropanol and dried. To improve the adhesion of the resin to the substrate, the wafer is treated with an epoxy-silane coupling agent. 2% by weight 2-(3,4 epoxycyclohexyl)-ethyltrimethoxysilane (Gelest, Tullytown, PA) in slightly acidic (pH 4-5) aqueous ethanol (Aper, Shelbyville, KY) was prepared solution. The wafers were dip-coated in this solution for about 60 seconds and rinsed briefly with absolute ethanol (EM Science, Gibbstown, NJ). The primed wafers were allowed to cure overnight. Work under safe light conditions, based on the resin solid weight, 0.6% of two-[4-(diphenylamino) styryl]-1-(2-ethylhexyloxy), 4-( A photoinitiator system consisting of methoxy)benzene (fr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

A method of making an inorganic structure comprising: (a) applying to a substrate a photoactive composition comprising: an active material, a photoinitiator system and a plurality of substantially inorganic colloidal particles having an average particle size of less than about 300 (b) photopatterning the composition to determine the structure; and (c) subjecting the structure to elevated temperature for a time sufficient to pyrolyze the active material, at least partially melting the particles.

Description

field of invention [0001] The present invention relates to photocurable compositions comprising inorganic particles and methods of making micron and submicron sized structures. Background of the invention [0002] Traditional methods of fabricating inorganic microstructures such as planar optical devices, such as optical waveguides, involve many time-consuming process steps and complex and expensive major equipment. The most common methods of fabricating waveguides involve depositing waveguide layers using plasma-enhanced chemical vapor deposition (PECVD) or flame hydrolytic deposition (FHD). A typical waveguide fabrication method begins by depositing a low-index optical cladding on an optically planar substrate. This layer is annealed and consolidated (FHD), or densified and stabilized (PECVD). A higher index optical core layer is then deposited on top of the lower cladding layer; this layer is usually also annealed. In order to make a usable device, the core must be pat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004G02B6/138G02B6/122G03F7/027G03F7/038G03F7/075
CPCG02B6/138G02B6/1221G03F7/038G03F7/027G03F7/0757G03F7/0047
Inventor C·A·莱舍戴尔C·R·查特D·S·汤普森W·L·汤普森
Owner 3M INNOVATIVE PROPERTIES CO
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products