Unlock instant, AI-driven research and patent intelligence for your innovation.

Apparatus and method for reducing contamination in immersion lithography

An immersion, photolithography technology, used in photolithography process exposure devices, microlithography exposure equipment, optics, etc.

Inactive Publication Date: 2007-08-01
IBM CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The presence of residual liquid layers or droplets can easily lead to the formation of defects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus and method for reducing contamination in immersion lithography
  • Apparatus and method for reducing contamination in immersion lithography
  • Apparatus and method for reducing contamination in immersion lithography

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] Disclosed herein are devices and methods for reducing contamination associated with immersion lights. Generally, wafer contamination remains near the wafer edge, in the sense that such contamination is produced as a result of the immersion liquid interacting with the topography between the wafer edge and the chuck. Recent simulations have shown that reducing the profile on the surface covered by the tool nozzle helps to maintain the meniscus and helps to avoid the formation of air bubbles. Therefore, it is advantageous to artificially extend the wafer surface so that the transition between wafer and chuck is as flat as possible rather than abrupt.

[0022] As highlighted in detail hereinafter, the exemplary embodiments herein maintain the integrity of the liquid meniscus in the cross-sectional gap of the wafer chuck by introducing an internal liquid circulation path within the chuck. The circulation path includes the slit itself so that the immersion liquid flows radia...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An apparatus for reducing contamination in immersion lithography includes a wafer chuck assembly having a wafer chuck configured to hold a semiconductor wafer on a support surface thereof. The wafer chuck has a gap therein, the gap located adjacent an outer edge of the wafer, and the gap containing a volume of immersion lithography fluid therein. A fluid circulation path is configured within the wafer chuck so as to facilitate the radial outward movement of the immersion lithography fluid in the gap, thereby maintaining a meniscus of the immersion lithography fluid at a selected height with respect to a top surface of the semiconductor wafer.

Description

technical field [0001] The present invention relates generally to semiconductor device fabrication and, more particularly, to apparatus and methods for reducing contamination in immersion lithography. Background technique [0002] Photolithography is one of the most important techniques utilized in semiconductor manufacturing, preferably for defining patterns, eg as used in wiring layer patterning processes or doped region definition processes. The photolithography process generally includes an exposure step and a development step, wherein the exposure step utilizes a light source to directly irradiate the photoresist layer or pass through a photomask to cause a chemical reaction in the exposed portion. A development step is performed to remove the exposed portions in the positive resist (or the unexposed portions in the negative resist) and form a photoresist pattern, thereby completing the transfer of the photomask pattern or dummy pattern to the resist material . [000...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20H01L21/027H01L21/68H01L21/683
CPCG03F7/70341G03F7/70916G03F7/70716G03D3/02H01L21/68735
Inventor D·施奈德黎家辉R·J·贝扎马D·L·戈德法布
Owner IBM CORP