Method of manufacturing two-dimension periodic semi-sphere shell dot matrix of large scale zinc oxide

A two-dimensional periodic, zinc oxide technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of unreported periodic spherical shell lattice structure of zinc oxide material, achieve low cost, Simple method and high efficiency

Inactive Publication Date: 2008-01-23
NANJING UNIV
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Problems solved by technology

From the above, it can be seen that the spherical shell structure has a wide range of applications in many fields, but the periodic spherical shell lattice structure of zinc oxide materials has not been reported so far.

Method used

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  • Method of manufacturing two-dimension periodic semi-sphere shell dot matrix of large scale zinc oxide
  • Method of manufacturing two-dimension periodic semi-sphere shell dot matrix of large scale zinc oxide
  • Method of manufacturing two-dimension periodic semi-sphere shell dot matrix of large scale zinc oxide

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Embodiment Construction

[0024] A method for preparing a large-scale zinc oxide two-dimensional periodic hemispherical shell lattice according to the present invention, which includes the following steps: Fig. 1 is a schematic diagram of the growth device of the present invention, wherein, 1 is a substrate material, and 2 is polystyrene Colloidal crystal, 3 is zinc oxide atomic cluster, 4 is spherical shell, 5 is zinc oxide target.

[0025] Preparation of Opal Structural Templates:

[0026] Substrate material: quartz wafer, silicon wafer or ITO glass, rectangular or square (1cm-5cm).

[0027] Assembly materials: silicon dioxide (100nm-600nm) and polystyrene (PS) (200nm-900nm) monodisperse microspheres (monodispersity<5%).

[0028] Growth process: using the vertical deposition method or pulling method, the substrate is immersed in the suspension of microspheres, and as the liquid level drops or the substrate is pulled, a multi-layer or single-layer colloidal crystal (opal) template can be obtained . ...

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Abstract

The invention discloses a large scale zinc oxide two-dimensional periodic semispherical shell lattice preparation method. The method comprises the following steps: an opal structure template is prepared; an assembly material is grown on a substrate material by adopting a vertical deposition method or a czochralski method to gain a multi-layer or the single-layer colloid crystal and the opal template; the prepared opal template is fixed on a sample holder by a RF high vacuum magnetism control sputtering device and the target material is zinc oxide; the position of the sample holder is regulated in order that the distance between the template and the zinc oxide target conforms to the requirement; a suitable growing condition is selected to get the two-dimensional periodic semispherical shell lattice with different thickness of the large scale zinc oxide. The invention is of simple preparation method, low cost, higher efficiency, high quality of the prepared spherical shell structure and good reproducibility, thus having important application prospect in grating, photo-catalysis and photoluminescence fields.

Description

technical field [0001] The invention relates to a preparation method of a zinc oxide material, in particular to a preparation method of a large-scale zinc oxide two-dimensional periodic hemispherical shell lattice. Background technique [0002] Zinc oxide (ZnO) is an important wide-bandgap semiconductor oxide material with good piezoelectric and photoelectric properties, and has a wide range of applications in UV lasers, chemical sensors, photoelectric switches, photocatalysis, and photoluminescence. The energy bandgap of ZnO at room temperature is 3.3eV, the laser binding energy is as high as 60meV, and it has strong free exciton luminescence in the ultraviolet band. In addition, raw material resources are abundant, cheap, non-toxic and harmless to the environment, suitable for epitaxial growth of thin films, and have broad application prospects in the field of information optoelectronics. It is another research hotspot in the world after GaN in recent years. One-dimension...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/54C23C14/58
Inventor 高远李爱东顾正彬陈延峰
Owner NANJING UNIV
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