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Method for manufacturing fuse box having vertically formed protective film

A technology of protective film and fuse box, which can be used in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., and can solve problems such as laser wavelength diffuse reflection

Inactive Publication Date: 2010-09-08
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] Step differences cause diffuse reflection of laser wavelengths in the repair process

Method used

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  • Method for manufacturing fuse box having vertically formed protective film
  • Method for manufacturing fuse box having vertically formed protective film
  • Method for manufacturing fuse box having vertically formed protective film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

[0026] 1 is a cross-sectional view showing a fuse box of a semiconductor device according to an embodiment of the present invention.

[0027] The active region 13 is formed in the semiconductor substrate 11 . A first interlayer dielectric film 15 including a contact plug 17 for a bit line is formed over the semiconductor substrate 11 .

[0028] A bit line 19 connected to the contact plug 17 is formed over the first interlayer dielectric film 15 .

[0029] A second interlayer dielectric film 21 is formed over the bit line 19 , and a plating layer 23 is formed over the second interlayer dielectric film 21 .

[0030] The plated layer 23 has prescribed regions that are etched and disconnected.

[0031] A third interlayer dielectric film 25 is formed over the plating layer 23 .

[0032] A contact plug 27 is formed to connect the first metal line 31 and the bit li...

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PUM

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Abstract

A method for manufacturing a fuse box of a semiconductor device includes forming an interlayer dielectric film over a semiconductor substrate including a given lower structure; forming a metal line and a fuse over the interlayer dielectric film; forming a first protective film over the resulting structure; etching the first protective film and the fuse at a given depth by a photo-etching process with a repair mask to form an open region; and forming a second protective film vertical to the fuse.

Description

technical field [0001] The present invention generally relates to a method of manufacturing a fuse box of a semiconductor device, and more particularly, to a method of manufacturing a fuse box of a semiconductor device in which a metal layer is used as a fuse. Background technique [0002] Generally speaking, the semiconductor manufacturing process includes: fabrication, electronic chip sorting, assembly and testing. [0003] The fabrication process typically involves iteratively performing diffusion, photolithography, and thin film processes to form circuits to obtain electrically operable products on wafers. [0004] If the photolithography process of the protective layer is completed, the electrical chip sorting process is performed. [0005] The electrical chip sorting process includes sorting defective chips by testing the electrical characteristics of the chips formed on the wafer. [0006] The electrical chip sorting process includes: testing before laser repair, la...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L23/5258H01L2924/0002H01L2924/00H01L21/82
Inventor 崔基寿
Owner SK HYNIX INC