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Solid state image pickup device and manufacturing method thereof

A technology for solid-state imaging components and manufacturing methods, which is applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., and can solve problems such as uneven reflectivity, large distance between color filters and photoelectric conversion elements, and easy residues

Active Publication Date: 2008-01-30
TOPPAN PRINTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, the color photoresist used in the photolithography process is restricted by the need for photosensitivity, and it is very difficult to select the one with a higher refractive index after curing. Therefore, due to the difference in the refractive index of such three-color color filters, there are slight The light-gathering effect of the lens is different, and there is a problem of non-uniformity in the reflectance
[0017] As described above, conventional color filters formed by photolithography have problems in that sufficient resolution cannot be obtained, residues tend to remain, and pixels are easily peeled off, and the characteristics of solid-state imaging devices are degraded.
In addition, there is a problem that the distance between the color filter and the photoelectric conversion element and the distance between the microlens and the photoelectric conversion element (distance under the lens) are large.

Method used

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  • Solid state image pickup device and manufacturing method thereof
  • Solid state image pickup device and manufacturing method thereof
  • Solid state image pickup device and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0181] A method of manufacturing the solid-state imaging device according to this embodiment will be described with reference to FIGS. 4A to 4G .

[0182] On the semiconductor substrate 20 equipped with two-dimensionally arranged photoelectric conversion elements 21 as in FIG. 4A , spin-coat the pigment-dispersed green photoresist at a speed of 1000 rpm, and then bake at 230° C. for 6 minutes, as shown in FIG. 4B , A green photoresist layer 22 is formed. At this time, among the green pigments, C.I.PG36 was used in the color table, the pigment concentration was 35% by weight, and the film thickness was 0.6 μm. In addition, a thermosetting acrylic resin is used as the main component resin of the green photoresist.

[0183]Next, on the green photoresist layer 22, a coating liquid mainly composed of acrylic photosensitive resin is spin-coated at a rotation speed of 3000 rpm, and patterned by photolithography to form a resin pattern 23 as shown in FIG. 4C. Then, using the resin p...

Embodiment 2

[0195] A method of manufacturing the solid-state imaging device according to this embodiment will be described with reference to FIGS. 8A to 8I .

[0196] On a semiconductor substrate 60 equipped with two-dimensionally arranged photoelectric conversion elements 61 as shown in FIG. 8A , a coating solution mainly composed of acrylic resin was spin-coated at 2000 rpm, and then baked at 230° C. for 6 minutes. , as shown in FIG. 8B , a first planarization layer 62 is formed. At this time, the film thickness of the first planarization layer 62 was 0.45 μm.

[0197] Next, on the first planarization layer 62 , spin-coat the pigment-dispersed green photoresist at 1000 rpm, and then bake at 230° C. for 6 minutes, as shown in FIG. 8C , to form the green photoresist layer 63 . At this time, C.I.PG36 in the color chart was used as the green pigment, the pigment concentration was 35% by weight, and the film thickness was 0.5 μm. In addition, as the resin of the green photoresist, a thermo...

Embodiment 3

[0213]A method of manufacturing the solid-state imaging device according to this embodiment will be described with reference to FIGS. 8A to 8D and FIGS. 9A to 9E.

[0214] On a semiconductor substrate 60 equipped with two-dimensionally arranged photoelectric conversion elements 61 as shown in FIG. 8A , a coating solution mainly composed of acrylic resin was spin-coated at 2000 rpm, and then baked at 230° C. for 6 minutes. , as shown in FIG. 8B , a first planarization layer 62 is formed. The film thickness of the first planarizing layer 62 at this time was 0.4 μm.

[0215] Next, on the first planarization layer 62 , spin-coat the pigment-dispersed green photoresist at 1000 rpm, and then bake at 230° C. for 6 minutes, as shown in FIG. 8C , to form the green photoresist layer 63 . At this time, C.I.PG76 in the color table was used as the green pigment, the pigment concentration was 40% by weight, and the film thickness was 0.5 μm. In addition, as the main component resin of the...

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Abstract

A method of manufacturing a solid-state imaging device including photoelectric conversion elements two-dimensionally arranged on a semiconductor substrate, and filter patterns of a plurality of colors arranged on the semiconductor substrate corresponding to each of the photoelectric conversion elements. composed of color filters. Filter patterns of a plurality of colors are formed by sequentially patterning a plurality of color filter layers. Among the filter patterns of a plurality of colors, at least an initially formed filter pattern is formed by dry etching, and the remaining filter patterns are formed by photolithography.

Description

technical field [0001] The present invention relates to a solid-state imaging element typified by photoelectric conversion elements such as C-MOS and CCD, and a manufacturing method thereof, and particularly relates to a color filter formed corresponding to the photoelectric conversion element. Background technique [0002] Solid-state imaging devices such as C-MOS and CCD mounted in digital cameras etc. have been increasing in pixel size and miniaturization in recent years, especially in finer devices, the pixel size is less than 2μm×2μm. [0003] In addition, a solid-state imaging element and a photoelectric conversion element are paired and have a color filter to achieve colorization. A method of forming a color filter is generally a method of forming a pattern by a photolithography process (see, for example, Japanese Patent Application Laid-Open No. 11-68076). [0004] In addition, the region (opening) where the photoelectric conversion element of the solid-state imagin...

Claims

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Application Information

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IPC IPC(8): H01L27/14G02B5/20H04N9/07
Inventor 绪方启介福吉健藏石松忠中尾充宏北村智史
Owner TOPPAN PRINTING CO LTD