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Solid state image pickup device and manufacturing method thereof

A technology for a solid-state imaging element and a manufacturing method, which is applied to electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problem of reduced characteristics of the solid-state imaging element, different light-converging effects of microlenses, and a large distance between a color filter and a photoelectric conversion element. And other issues

Active Publication Date: 2009-08-26
TOPPAN PRINTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, the color photoresist used in the photolithography process is restricted by the need for photosensitivity, and it is very difficult to select the one with a higher refractive index after curing. Therefore, due to the difference in the refractive index of such three-color color filters, there are slight The light-gathering effect of the lens is different, and there is a problem of non-uniformity in the reflectance
[0017] As described above, conventional color filters formed by photolithography have problems in that sufficient resolution cannot be obtained, residues tend to remain, and pixels are easily peeled off, and the characteristics of solid-state imaging devices are degraded.
In addition, there is a problem that the distance between the color filter and the photoelectric conversion element and the distance between the microlens and the photoelectric conversion element (distance under the lens) are large.

Method used

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  • Solid state image pickup device and manufacturing method thereof
  • Solid state image pickup device and manufacturing method thereof
  • Solid state image pickup device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0181] refer to Figure 4A ~ Figure 4G , the method of manufacturing the solid-state imaging device according to this embodiment will be described.

[0182] exist Figure 4A On the semiconductor substrate 20 equipped with such two-dimensionally arranged photoelectric conversion elements 21, after the rotation speed of 1000 rpm, the pigment-dispersed green photoresist is coated and baked at 230 ° C for 6 minutes. Figure 4B As shown, a green photoresist layer 22 is formed. At this time, among the green pigments, C.I.PG36 was used in the color table, the pigment concentration was 35% by weight, and the film thickness was 0.6 μm. In addition, a thermosetting acrylic resin is used as the main component resin of the green photoresist.

[0183] Next, on the green photoresist layer 22, after spin-coating a coating solution mainly composed of acrylic photosensitive resin at a speed of 3000 rpm, patterning is carried out by photolithography, as shown in FIG. Figure 4C As shown, a ...

Embodiment 2

[0195] refer to Figure 8A ~ Figure 8I , the method of manufacturing the solid-state imaging device according to this embodiment will be described.

[0196] exist Figure 8A Such a semiconductor substrate 60 equipped with two-dimensionally arranged photoelectric conversion elements 61 was spin-coated with a coating solution mainly composed of acrylic resin at a speed of 2000 rpm, and then baked at 230° C. for 6 minutes. Figure 8B As shown, the first planarization layer 62 is formed. At this time, the film thickness of the first planarization layer 62 was 0.45 μm.

[0197] Next, on the first planarization layer 62, after spin-coating the pigment-dispersed green photoresist at a speed of 1000 rpm, bake it at 230° C. for 6 minutes, as Figure 8C As shown, a green photoresist layer 63 is formed. At this time, C.I.PG36 in the color chart was used as the green pigment, the pigment concentration was 35% by weight, and the film thickness was 0.5 μm. In addition, as the resin of ...

Embodiment 3

[0213] refer to Figure 8A ~ Figure 8D as well as Figure 9A ~ Figure 9E , the method of manufacturing the solid-state imaging device according to this embodiment will be described.

[0214] exist Figure 8A Such a semiconductor substrate 60 equipped with two-dimensionally arranged photoelectric conversion elements 61 was spin-coated with a coating solution mainly composed of acrylic resin at a speed of 2000 rpm, and then baked at 230° C. for 6 minutes. Figure 8B As shown, the first planarization layer 62 is formed. The film thickness of the first planarizing layer 62 at this time was 0.4 μm.

[0215] Next, on the first planarization layer 62, after spin-coating the pigment-dispersed green photoresist at a speed of 1000 rpm, bake it at 230° C. for 6 minutes, as Figure 8C As shown, a green photoresist layer 63 is formed. At this time, C.I.PG76 in the color table was used as the green pigment, the pigment concentration was 40% by weight, and the film thickness was 0.5 μm....

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Abstract

Disclosed is a method for manufacturing a solid-state imaging device which comprises photoelectric converters two-dimensionally arranged in a semiconductor substrate and a color filter composed of filter patterns of a plurality of colors which are so arranged on the semiconductor substrate as to correspond to respective photoelectric converters. The filter patterns are formed by sequentially patterning a plurality of color filter layers. Among the filter patterns, at least one which is patterned first is formed by dry etching while the other filter patterns are formed by photolithography.

Description

technical field [0001] The present invention relates to a solid-state imaging element represented by photoelectric conversion elements such as C-MOS and CCD, and a manufacturing method thereof, and particularly relates to a color filter formed corresponding to the photoelectric conversion element. Background technique [0002] Solid-state imaging elements such as C-MOS and CCD mounted in digital cameras etc. have been increasing in pixel size and miniaturization in recent years, especially in finer elements, the pixel size is less than 2μm×2μm. [0003] In addition, a solid-state imaging element and a photoelectric conversion element are paired and have a color filter to achieve colorization. A method of forming a color filter is generally a method of forming a pattern by a photolithography process (see, for example, Japanese Patent Application Laid-Open No. 11-68076). [0004] In addition, the region (opening) where the photoelectric conversion element of the solid-state i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/14G02B5/20H04N9/07H04N23/12
Inventor 绪方启介福吉健藏石松忠中尾充宏北村智史
Owner TOPPAN PRINTING CO LTD