Chemical mechanical polishing slurry composition and polishing method
A technology of chemical mechanics and composition, applied in the direction of polishing composition, polishing composition containing abrasives, chemical instruments and methods, etc., can solve the problems that metal materials cannot use PRAMs equipment, layer property differences, etc.
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Embodiment 1-2 and comparative example 1-2
[0077] A slurry having the composition shown in Table 1 below was prepared. The average diameter of primary particles is 15nm and the specific surface area is 200m 2 / g fumed silica particles are used as abrasive particles, and the amount of the particles is 0.5% by weight based on the total weight of each slurry composition. The fumed silica particles are uniformly dispersed in deionized water. In Examples 1 and 2, triethylamine (TEA) was used as the nitrogen-containing compound, and in Example 2 and Comparative Example 2, hydrogen peroxide was used as the oxidizing agent. The final pH of all slurry compositions was adjusted to 2.5 using nitric acid.
[0078] Table 1
[0079]
[0080] Under the following polishing conditions, each slurry composition was used to polish a non-patterned wafer containing a phase change material, and then the polishing effect of each slurry composition on the phase change material was tested. The results are shown in Table 2.
[0081] Use Ge with a c...
Embodiment 3-6
[0089] According to the same method as in Example 1, a slurry composition was prepared, except that the type and content of the nitrogen-containing compound were changed as shown in Table 3. According to the aliphatic amine, that is, the number of carbon atoms of the alkyl group substituted on the tertiary alkylamine (trimethylamine, triethylamine, and tripropylamine), the polishing performance of the slurry composition on the GST layer (ie, polishing Rate) for comparison. According to the method shown in Example 1, the polishing rate of polishing a non-patterned wafer deposited with a phase change material using each slurry composition was measured. The results are shown in Table 3.
[0090] table 3
[0091]
[0092] It can be seen from the results in Table 3 that compared with the slurry compositions of Comparative Examples 1 and 2, the slurry compositions of Examples 3-6 show a higher polishing rate for the GST layer.
[0093] As the number of carbon atoms of the alkyl group su...
Embodiment 7-11
[0095] According to the same method as in Example 1, a slurry composition of composition was prepared, except that the type and content of the nitrogen-containing compound were changed as shown in Table 4. According to the shape of the nitrogen-containing compound, the polishing rate of the slurry composition in GST was compared. According to the method shown in Example 1, the polishing rate for polishing a non-patterned wafer deposited with a phase change material using each slurry composition was measured. The results are shown in Table 4.
[0096] Table 4
[0097]
[0098] It can be seen from the results in Table 4 that, compared with the slurry compositions of Comparative Examples 1 and 2, the slurry compositions of Examples 7-11 show a higher polishing rate for the GST layer. In particular, a slurry composition containing aliphatic alkylamine or ammonium base has better polishing results.
[0099] [Test for polishing of patterned wafers]
[0100] In order to objectively test t...
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