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Light emitting element

A technology of light-emitting elements and light-emitting stacks, which is applied to semiconductor devices, electrical components, and electroluminescence light sources of light-emitting elements, and can solve problems such as increasing complexity, reducing mass production efficiency, and increasing mass production costs.

Active Publication Date: 2009-01-07
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Different LED structures have different process conditions, which increases the complexity of ma

Method used

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Examples

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Example Embodiment

[0059] figure 1 To illustrate a schematic cross-sectional view of a light-emitting element according to the first embodiment of the present invention. The light emitting element 1, such as a light emitting diode (LED), includes a substrate 100, a semiconductor light emitting stack 110, a light field modulating layer 130, and upper and lower electrodes 141 and 142. In this embodiment, the material of the substrate 100 includes III-V semiconductor materials, such as gallium arsenide phosphide (GaAsP), gallium arsenide (GaAs), gallium phosphide (GaP) or other similar materials. The semiconductor light-emitting stack 110 is located on the substrate 100 and includes: an n-type semiconductor layer 112, a first p-type semiconductor layer 114, an active layer 113 between the semiconductor layers 112 and 114, and a second p-type semiconductor layer. Type semiconductor layer 115. In other embodiments, the position configuration of the n-type semiconductor layer 112 and the first p-type se...

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Abstract

The invention discloses a luminescent element, comprising a semiconductor luminescent lamination layer and an optical field modulation layer which is arranged on the optical emitting surface of the semiconductor luminescent lamination layer; wherein, the optical field modulation layer comprises at least a first layer and a second layer which is arranged on the first layer; the refraction coefficient of the first layer is less than that of the second layer.

Description

technical field [0001] The present invention relates to a light emitting element, in particular to a light emitting diode element. Background technique [0002] Light-emitting diodes (LEDs) have different light-emitting principles and structures from traditional light sources. They have the advantages of small size and high reliability, and are widely used in the market. For example, optical display devices, laser diodes, traffic signs, data storage devices, communication devices, lighting devices, and medical devices. [0003] With the successful development of high-brightness LEDs, LED applications have expanded to indoor or outdoor large-scale displays. In addition, because the LED light source has the advantages of good color saturation, high contrast and thinness, it has become a new generation of LCD display backlight replacing the traditional cold cathode tube (CCFL) technology. In order to meet its diverse application requirements, the photoelectric characteristics...

Claims

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Application Information

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IPC IPC(8): H05B33/22F21V5/00F21Y101/02F21Y115/10
Inventor 谢明勋姚久琳
Owner EPISTAR CORP
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