Method for increasing energy band gap of aluminum oxide layer and method of manufacturing storing device
A technology of aluminum oxide layer and energy bandgap, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of reduced thickness of blocking oxide film, insufficient charge retention capacity of storage devices, etc., and achieve stable charge retention effect of ability
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[0040] Various example embodiments will now be described more fully with reference to the accompanying drawings, in which some example embodiments are shown. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.
[0041] Detailed illustrative example embodiments are disclosed herein. However, specific structural and functional details disclosed herein are merely representative for purposes of describing example embodiments. This invention may, however, be embodied in many alternative forms and should not be construed as limited to only the example embodiments set forth herein.
[0042] Therefore, although the example embodiments are capable of various modifications and alternative forms, the examples of the example embodiments are shown by way of example in the drawings and will be described here in detail. It should be understood, however, that there is no intent to limit example embodiments to the particular forms disclosed, but on the contrar...
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