Method for preparing polysilicon

A technology of polysilicon and chlorosilane, applied in the direction of silicon, etc., can solve the problems of insufficient utilization of hydrogen, environmental pollution, high material consumption, and increased cost, so as to reduce the generation and quantity of pollutants, save project investment, The effect of reducing consumption

Active Publication Date: 2011-05-04
CHINA ENFI ENGINEERING CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the water washing process, impurity gases such as oxygen and carbon dioxide in the water will pollute the hydrogen, so a large amount of recovered hydrogen needs to be purified again
In addition, the hydrolysis of chlorosilane during the washing process produces sewage, which requires further treatment, resulting in environmental pollution and large material consumption.
At the same time, the generated hydrogen has not been fully utilized, which not only wastes energy, increases costs, but also causes environmental pollution.

Method used

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  • Method for preparing polysilicon
  • Method for preparing polysilicon
  • Method for preparing polysilicon

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Embodiment Construction

[0020] Specific embodiments are described below in order to explain the present invention by referring to the figures, and the described embodiments are exemplary and should not be construed as limitations of the present invention.

[0021] refer to figure 1 , which shows a block diagram of a process for industrially producing polysilicon according to an embodiment of the present invention. According to the technique of producing polysilicon of the present invention, be to utilize industrial silicon and hydrogen chloride (HCl) as main raw material, generate trichlorosilane (SiHCl) by controlling reaction condition 3 )-based mixture of chlorosilane and hydrogen, and then trichlorosilane (SiHCl 3 ) after being purified, sent to the reduction furnace to make trichlorosilane (SiHCl 3 ) and auxiliary material hydrogen (H 2 ) reaction, reduction to generate polysilicon.

[0022] In the process of the above-mentioned industrial production of polysilicon, the tail gas produced mai...

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Abstract

The invention relates to a method for producing polysilicon comprising the following steps: reacting industrial silicon with chlorine hydride to generate trichlorosilane; reacting the purified trichlorosilane with hydrogen gas to generate the polysilicon; collecting tail gases mainly including the hydrogen gas, chlorine hydride, dichIorosilane, trichlorosilane and silicon tetrachloride; adding pressure to and cooling the tail gases, and carrying out a gas-liquid separation to the hydrogen gas, the chlorine hydride and the dichIorosilane from the liquid trichlorosilane and the silicon tetrachloride; leaching the hydrogen gas, the chlorine hydride and the dichIorosilane by a liquid state silicon tetrachloride, thereby removing the impurities such as chlorine hydride, solid impurities and perchlorosilane or the like; separating the hydrogen gas from the chlorine hydride and the dichlorosilane by a liquid state absorbent; desorbing the chlorine hydride and the dichlorosilane out from the liquid state absorbent through heating; separating the chlorine hydride from the dichlorosilane by controlling the pressure and / or temperature; and separating the trichlorosilane from the silicon tetrachloride by controlling the temperature and / or the pressure. The inventive method can recover and utilize the tail gas, and increases the output and the efficiency.

Description

technical field [0001] The invention relates to a method for industrially producing polysilicon, more specifically, to a method for producing polysilicon capable of dry recovery and utilization of tail gas. Background technique [0002] Polycrystalline silicon is the raw material for preparing monocrystalline silicon, which is ultimately used in the production of integrated circuits and electronic devices. It is one of the basic raw materials with the largest consumption and the highest purity requirements in the information industry. It is also a product and industry that the country encourages the development of. [0003] The world's advanced polysilicon production technology has always been monopolized by companies from the United States, Japan, and Germany. Each company has its own technical secrets and technical characteristics. After continuous research and development, it has formed its own production process. Set out, strictly control technology transfer and monopoli...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/03
Inventor 沈祖祥严大洲汤传斌肖荣晖毋克力
Owner CHINA ENFI ENGINEERING CORPORATION
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