Electrically enhanced wirebond package

Abstract

Consistent with an example embodiment, there is an integrated circuit (IC) device in a packaging having electrically insulated connections. The IC device comprises a semiconductor device (100) mounted onto a die attachment area (10); the semiconductor device has a plurality of bonding pads (20a, 25a, 30a, 35a). A lead frame having a plurality of bonding fingers (20b, 25b, 30b, 35b) surrounds the die attachment area. A plurality of mutually isolated connection conductors (25d, 30d, 40, 50) having respective first ends are attached to respective bonding pads on the semiconductor device and the plurality of mutually isolated connection conductors having respective second respective second ends are attached to respective bonding fingers of the lead frame. An insulating material (45) coats at least a portion of the plurality of mutually isolated connection conductors. The mutually isolated connection conductors may include a bond wire (40, 50) for the signal connection and a conductive strap (25d, 30d) for the voltage reference connection. The insulating material (45) coating the bond wires reduces the likelihood of short circuits during encapsulation.

Description

technical field [0001] The present invention relates to integrated circuit (IC) packaging. More particularly, the present invention relates to wire bonding IC device dies wherein selected connecting wires between the semiconductor die and a packaging substrate are covered with an insulating material. Background technique [0002] The electronics industry continues to rely on advances in semiconductor technology to achieve higher performance devices in tighter areas. For many applications, achieving higher performance devices requires integrating a large number of electronic devices onto a single silicon wafer. As the number of electronic devices per given area of ​​a silicon wafer increases, the manufacturing process becomes more difficult. [0003] A variety of semiconductor devices have been fabricated for different applications with numerous rules. Such silicon-based semiconductor devices often include metal oxide semiconductor field effect transistors (MOSFETs), such ...

AI Technical Summary

Problems solved by technology

[0009] As technology packs more performance into smaller packages, there is a risk of adjacent bond wires bending and touching each other during the packaging process, with contacting bond wires causing an electrical short

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