Pre-deposition method for forming protection film in chamber

A pre-deposition, protective film technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of wafer surface particle defects, easy peeling off of protective film, unevenness, etc., to reduce particle defects Effect

Inactive Publication Date: 2010-08-25
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the actual manufacturing process, it is found that the protective film formed on the inner wall of the cavity is unevenly formed under the action of high-power radio frequency by using the existing technology, and some places are thick, and some places are thin, resulting in adhesion to the inner wall of the cavity. Not solid
In the pure hydrogen HDP-CVD process, the unevenly distributed protective film is easily peeled off by the violent collision of the plasma, resulting in particle defects on the wafer surface

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pre-deposition method for forming protection film in chamber
  • Pre-deposition method for forming protection film in chamber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] The preferred embodiments of the pre-deposition method for forming a protective film on the inner wall of the cavity provided by the present invention will be described in detail below in conjunction with the accompanying drawings, in order to further understand the purpose, characteristics and beneficial effects of the present invention.

[0010] The pre-deposition method for forming a protective film on the inner wall of the cavity provided by the present invention is carried out before the shallow trench filling process is performed by using pure hydrogen HDP-CVD process. The protection film is generally the same as the insulator material filled in the shallow trench, so the reaction gas in the chamber during the pre-deposition step is the same as the reaction gas during the pure hydrogen HDP-CVD process.

[0011] Please refer to FIG. 1 , before the pre-deposition step, firstly, the reaction gas is input into the chamber, and the reaction gases in this embodiment are ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for predepositing a protective film formed on the inner wall of a cavity, and relates to a slit filling processing procedure by pure hydrogen HDP-CVD process. A protective film formed by the prior predeposition method is easily separated in a subsequent processing procedure. The method comprises the following steps: first, introducing reaction gas in the cavity; then, opening top radio frequency and side radio frequency of the cavity to carry out a predeposition step to form the protective film on the inner wall of the cavity, wherein the predeposition step iscarried out in two steps: in one step, power of the top radio frequency is more that that of the side radio frequency; and in the other step, the power of the top radio frequency is less than that ofthe side radio frequency. Compared with the prior art, the protective film formed by the predeposition method has the advantages of even distribution and good adherence, so that in the subsequent pure hydrogen HDP-CVD process, the protective film can not be easily separated by plasma in fierce motion, thereby particle deficiency on the surface of a wafer is reduced in the processing procedure of filling a slit.

Description

technical field [0001] The invention relates to a shallow trench (STI) filling process using a pure hydrogen high-density plasma chemical vapor deposition (HDP-CVD) process, in particular to a pre-deposition method in the shallow trench filling process, which can be used in a cavity The inner wall forms a protective film. Background technique [0002] Due to its better filling capability, the pure hydrogen HDP-CVD process has become the mainstream process for filling shallow trenches in the technology generation of 90nm and below. In the pure hydrogen HDP-CVD filling shallow trench process, the temperature in the chamber (chamber) can generally reach about 800°, and the plasma activity is relatively intense. Therefore, the stability of the wafer surface characteristics becomes a key factor affecting the yield of the wafer. . [0003] Due to the intense activity of the plasma in the pure hydrogen HDP-CVD process, in order to avoid damage to the inner wall of the cavity by t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/505C23C16/52
Inventor 刘明源胡亚威
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products