Resistive memory device and method of fabricating the same

Abstract

A resistive memory device includes: a substrate, an insulation layer arranged over the substrate, a first electrode plug penetrating the insulation layer from the substrate, having a portion protruded out of an upper portion of the insulation layer, and having peaks at edges of the protruded portion, a resistive layer disposed over the insulation layer and covering the first electrode plug, and a second electrode arranged over the resistive layer.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2008-0072477 filed on July 24, 2008, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to a semiconductor device manufacturing technology, in particular to a resistive memory device utilizing impedance change such as a nonvolatile resistive random access memory (ReRAM) and a manufacturing method thereof. Background technique [0003] Recently, developers have been developing next-generation memory devices that can replace dynamic random access memory (DRAM) and flash memory. [0004] One of the next-generation memory devices is a resistive memory device, which takes advantage of the characteristics of a resistive layer that can switch between at least two different impedance states by drastically changing the resistance value in response to a bias voltage applied to the resistive layer. to switch between. [0005] The structu...

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Problems solved by technology

[0008] However, due to the irregular generation of oxygen vacancy filaments, the resistive memory device cannot exhibit uniform characteristic distribution, such as voltage / current distribution in set / reset mode

This problem of non-uniform characteristic distribution becomes more serious as resistive memory devices are miniaturized

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