Quantum dot optical modulator based on quantum-confined Stark effect

A technology of Stark effect and optical modulator, applied in optics, nonlinear optics, instruments, etc., can solve the problem of no direct observation, etc., and achieve the ideal effect of energy utilization.

Inactive Publication Date: 2010-02-03
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The Stark shift of the lowest excited state of CdSe is very large, but due to the ubiquitous photoionization characteristics in quantum dots and the randomness of the position of ionized electrons, the Stark effect of population colloidal quantum dots has not been directly observed so far. arrive

Method used

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  • Quantum dot optical modulator based on quantum-confined Stark effect
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  • Quantum dot optical modulator based on quantum-confined Stark effect

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Embodiment Construction

[0023] The photometric modulator is composed of four layers of films sequentially covered and arranged; from top to bottom, the first layer is the first ITO film 1, the second layer is PVK film 2, and the third layer is SiO 2 Thin film 4 , the fourth layer is the second ITO thin film 3 , and the fifth layer is the glass substrate 5 .

[0024] The first ITO thin film 1 and the second ITO thin film 3 are transparent conductive thin films, and electrodes are respectively introduced into these two thin films as input ends of control signals.

[0025] The PVK thin film 2 is a 900nm PUK thin film containing CdSe / ZnS type quantum dots, in which the concentration of quantum dots is high and the sizes of the quantum dots are close to the same.

[0026] The technical solution of the present invention will be further described below in conjunction with the accompanying drawings.

[0027] The quantum dot optical modulator based on the quantum-confined Stark effect proposed by the present...

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Abstract

A quantum dot optical modulator based on quantum-confined Stark effect makes use of quantum confinement effect of quantum dots and consists of four layers of films which are sequentially covered and arrayed from the top to bottom, wherein the first layer is a first ITO film (1), the second layer is a PVK film (2), the third layer is an SiO2 film (4), the fourth layer is a second ITO film (3), anda fifth layer which is a glass substrate (5) is also involved. Therefore, the quantum dot optical modulator can change the light transmittance by changing the voltage applied onto the films. Due to light modulation, switch and filtration functions, the quantum dot optical modulator can be used as a photoswitch, a luminosity modulator and a filter used in the communication field.

Description

technical field [0001] The invention proposes a design scheme of a light modulator with a thin-film structure, especially relates to the use of the quantum-confined Stark effect of quantum dots to realize the modulation of light intensity, which can be used as an optical switch and a controllable color filter, and can It is used in the field of optical communication and signal processing. Background technique [0002] When an external electric field acts on the semiconductor quantum structure material, it exhibits an electric absorption property, that is, the wavelength and width of the absorption edge change with the external electric field. This mechanism is known as the quantum-confined Stark effect. [0003] When the external electric field acts on the quantum well material in parallel, it exhibits similar electric absorption properties to the bulk material, and the absorption edge shifts and broadens as the Franz-Keldysh effect. However, when the external electric fie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/017
Inventor 张家雨王志兵李君劲
Owner SOUTHEAST UNIV
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