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Solid-state imaging device and method of manufacturing the same

A technology of a solid-state imaging device and a manufacturing method, which can be applied in semiconductor/solid-state device manufacturing, electric solid-state devices, radiation control devices, etc., and can solve problems such as pixel size reduction

Inactive Publication Date: 2010-02-24
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, there has been a tendency to reduce the pixel size due to the demand for multi-pixel and optical size reduction in recent years.

Method used

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  • Solid-state imaging device and method of manufacturing the same
  • Solid-state imaging device and method of manufacturing the same
  • Solid-state imaging device and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0042] 1. Structural example

[0043] first use Figure 1 to Figure 7 A configuration example of the solid-state imaging device according to the first embodiment of the present invention will be described.

[0044] 1-1. Overall structure example

[0045] use figure 1 An example of the overall configuration of the solid-state imaging device related to this example will be described. figure 1 is a system block diagram showing an example of the overall configuration of the solid-state imaging device related to this example. figure 1 shows a configuration in which an AD conversion circuit is arranged at a column position (Columns) of a pixel array.

[0046] As shown in the figure, a solid-state imaging device 10 related to this example includes a pixel array (imaging area) 12 and a drive circuit area 14 .

[0047] The pixel array 12 is formed by arranging a unit pixel array including a photoelectric conversion unit and a signal scanning circuit unit on a semiconductor substra...

Deformed example 1

[0119] [Modification 1 (on one side)]

[0120] then use Figure 16 A solid-state imaging device related to Modification 1 will be described. This embodiment relates to an example in which ball solder lands are provided on the side where the signal scanning circuit is formed. In this description, detailed descriptions of parts that overlap with those of the first embodiment described above are omitted.

[0121]As shown in the figure, the solid-state imaging device according to Modification 1 differs from the above-mentioned first embodiment in that solder balls 65 are provided on the second pads 42 on the side where the signal scanning circuit is formed.

[0122] Other manufacturing methods and the like are substantially the same as those of the above-mentioned first embodiment, and thus detailed description thereof will be omitted.

[0123] According to Modification 1, at least the same effects as those of (1) to (2) above can be obtained. Furthermore, this modification 1 ...

Deformed example 2

[0124] [Modification 2 (an example of having ball solder regions on both sides)]

[0125] Next, use Figure 17 A solid-state imaging device related to Modification 2 will be described. This embodiment relates to an example in which ball solder lands are provided on the light irradiation surface side and the signal scanning circuit forming surface side. In this description, detailed descriptions of parts that overlap with those of the first embodiment described above are omitted.

[0126] As shown in the figure, the solid-state imaging device according to Modification 2 is different from the above-mentioned first embodiment in that the first pad 41 on the light irradiation side and the signal scanning circuit forming side are placed on the first pad 41. Solder balls 65 and 66 are provided on the second pad 42 .

[0127] Other manufacturing methods and the like are substantially the same as those of the above-mentioned first embodiment, and thus detailed description thereof w...

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PUM

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Abstract

A solid-state imaging device includes a pixel region and a driving circuit region which are disposed on a semiconductor substrate, the pixel region being configured such that a photoelectric conversion unit and a signal scanning circuit unit are included and a matrix of unit pixels is disposed, and the driving circuit region being configured such that a driving circuit for driving the signal scanning circuit unit is disposed, a first pad which is provided on a peripheral region on the semiconductor substrate on a side of a light receiving surface, the light receiving surface being formed on asubstrate surface which is opposite to a substrate surface where the signal scanning circuit unit is formed, and a second pad which is provided on a side where the signal scanning circuit unit is formed, and which is disposed only at a position overlapping the pixel region along the thickness direction of the semiconductor substrate.

Description

[0001] This application is based on and claims priority from Japanese Patent Application No. 2008-210841 filed on August 19, 2009, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to a solid-state imaging device and a manufacturing method thereof, and is applicable to, for example, a MOS-type solid-state imaging device and a manufacturing method thereof. Background technique [0003] Solid-state imaging devices including CMOS sensors are currently used in various applications such as digital still cameras, video cameras, or surveillance cameras. Among them, single-plate imaging devices that obtain multiple color information with a single pixel array occupy a mainstream position. [0004] However, there has been a tendency to reduce the pixel size due to the demand for multi-pixel and optical size reduction in recent years. For example, the pixel size of a CMOS sensor widely used in digital cameras and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N3/15H01L27/146H01L21/822H04N25/00
CPCH01L27/14636H01L27/14627H01L27/14621H01L2924/3011H01L27/14643H01L23/481H01L2224/48463H01L27/14609H04N5/374H01L27/1464H01L2924/13091H04N25/76H01L2924/00014H01L2924/00
Inventor 山下浩史
Owner KK TOSHIBA