Insulation system for polycrystalline silicon ingot furnace

A polysilicon ingot furnace and heat preservation system technology, which is applied in the directions of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of high cost and large ingot thermal stress, so as to improve product quality, save energy and increase productivity Effect
CN101660201AInactive Publication Date: 2010-03-03NAN AN SANJING SOLAR POWER
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NAN AN SANJING SOLAR POWER
Publication Date
2010-03-03
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to an insulation system for a polycrystalline silicon ingot, comprising a furnace body. A metal frame is arranged on the periphery inside the furnace body; the lateral wall of the metal frame is provided with a lateral mullite fiber board; the top part of the metal frame is provided with a top mullite fiber board; the bottom of a graphite plate under a crucible is provided with a bottom mullite fiber plate; a closed space is formed by the mullite fiber plates which are positioned on the bottom of the graphite plate, in the lateral wall of the metal frame and on the top ofthe metal frame respectively; a layer of a corundum mullite burning plate is arranged inside of the lateral mullite fiber plate close to the center of the furnace center. The insulation system can reduce electric energy consumption in a process for casting the polycrystalline silicon, reduces thermal stress of the silicon ingot and improves yield of slices when large silicon ingots are cast, andis particularly suitable for producing polycrystalline silicon ingots over 450kgs.
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Description

technical field

[0001] The invention relates to a furnace body heat preservation system, in particular to a polysilicon ingot furnace heat preservation system. Background technique

[0002] At present, the mainstream product of polysilicon ingots in the market is 275kg polysilicon ingots, accounting for 60-80% of the market. Another mainstream product is 450kg polysilicon ingots. The market development trend is to develop towards 450kg polysilicon ingots, and 800kg Grade and above polysilicon ingots are also in the research and development stage. A significant problem with large ingots is thermal stress. Since the nature of silicon is thermal contraction and cold expansion, the larger the ingot, the more difficult it is to control the uniformity of cooling, and the concentration of internal stress directly affects the yield of slices.

[0003] The insulation materials of existing polysilicon ingot casting furnaces are all hard graphite carbon felt materials, which are expe...

Claims

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