Film forming method of ti-series film

Abstract

The present invention provides a film forming method of Ti-series film, which does not generate the adverse states such as the reaction among pre-coated film, spraying head and the base and can suppress the inter-surface deviation of the thickness of processed film. The following processes are performed repeatedly: a process of heating a base (2) and forming the pre-coated film on the surface of the spraying head (10) with the processing gas which contains Ti at a state that a wafer (W) does not exist on a base (2); a process for setting the wafer (W) on the base which is heated to a preset temperature, supplying processing gas into a chamber (1) and forming a Ti film on the wafer (W); and a process of introducing cleaning gas into the chamber (1) for washing the chamber (1) at the state that a wafer (W) does not exist on a base (2). In the forming process of pre-coated film, after a low-temperature pre-coated film (71) is formed when the temperature of the base (2) is lower than the temperature in the Ti film forming process, a high-temperature pre-coated film (72) is formed in the temperature when the Ti film is formed.

Description

technical field [0001] The present invention relates to a film-forming method of a Ti-based film and a storage medium storing a program for implementing the method. In the chamber, a processing gas containing Ti is sprayed from a shower head, and placed on a mounting table arranged in the chamber. A film containing Ti element (Ti-based film) is formed on the surface of the substrate to be processed. Background technique [0002] In the manufacture of semiconductor devices, in response to the recent requirements for higher density and higher integration, there is a tendency to make the circuit structure into a multilayer wiring structure. Therefore, as the connection between the lower semiconductor substrate and the upper wiring layer Embedding techniques for interlayer electrical connection such as contact holes and via holes serving as connection portions between upper and lower wiring layers are becoming more and more important. [0003] In order to form contact between t...

AI Technical Summary

Problems solved by technology

However, in the technology of Patent Document 2, the temperature of the precoat film is lower than that of the film forming process, and the film quality of the precoat film is different from that of the Ti film formed during the film forming process. A Ti film of different film quality is formed and adhered on the precoat film of the susceptor, and the film thickness of the Ti film formed on the wafer before the film quality of the deposited film is stabilized is not uniform among the wafer surfaces.

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