film forming method of ti film

Abstract

The present invention provides a film-forming method of a Ti-based film, which can suppress inter-planar variations in processed film thickness without causing problems such as reaction of a precoat film, a shower head, and a susceptor during film formation. The following steps are repeated: in the state where there is no wafer (W) on the susceptor (2), the susceptor (2) is heated, and a precoat is formed on at least the surface of the shower head (10) by using a processing gas containing Ti. The process of film; thereafter, the wafer (W) is placed on the susceptor (2) heated to a predetermined temperature, and the processing gas is supplied into the chamber (1), and the process of forming a Ti film on the wafer (W); A process of introducing a cleaning gas into the chamber (1) to clean the inside of the chamber (1) without the wafer (W) on the susceptor (2). In the precoat film forming step, after the temperature of the susceptor (2) is lower than that of the Ti film forming step to form the low-temperature precoat film (71), at the temperature at the time of the Ti film forming, A high temperature precoat film (72) is formed.

Description

technical field [0001] The present invention relates to a film-forming method of a Ti-based film and a storage medium storing a program for implementing the method. In the chamber, a processing gas containing Ti is sprayed from a shower head, and placed on a mounting table arranged in the chamber. A film containing Ti element (Ti-based film) is formed on the surface of the substrate to be processed. Background technique [0002] In the manufacture of semiconductor devices, in response to the recent requirements for higher density and higher integration, there is a tendency to make the circuit structure into a multilayer wiring structure. Therefore, as the connection between the lower semiconductor substrate and the upper wiring layer Embedding techniques for interlayer electrical connection such as contact holes and via holes serving as connection portions between upper and lower wiring layers are becoming more and more important. [0003] In order to form contact between ...

AI Technical Summary

Problems solved by technology

However, in the technology of Patent Document 2, the temperature of the precoat film is lower than that of the film forming process, and the film quality of the precoat film is different from that of the Ti film formed during the film forming process. A Ti film of different film quality is formed and adhered on the precoat film of the susceptor, and the film thickness of the Ti film formed on the wafer before the film quality of the deposited film is stabilized is not uniform among the wafer surfaces.

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